FQPF33N10L ,100V LOGIC N-Channel MOSFETapplications such as high efficiencyswitching DC/DC converters, and DC motor control.D! !""!!""""G! ..
FQPF34N20 ,200V N-Channel MOSFET
FQPF3N25 ,250V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 2.3A, 250V, R = 2.2Ω @V = 10 VDS(on) ..
FQPF3N50C , 500V N-Channel MOSFET
FQPF3N50C , 500V N-Channel MOSFET
FQPF3N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 2.0A, 600V, R = 3.6Ω @V = 10 VDS(on) ..
G914G ,mode Technology Inc - 300mA High PSRR, Low-Noise LDO Regulators
G914GF ,mode Technology Inc - 300mA High PSRR, Low-Noise LDO Regulators
G914HF ,mode Technology Inc - 300mA High PSRR, Low-Noise LDO Regulators
G915T24UF ,mode Technology Inc - 1.5V 600mA Low Dropout Regulator
G916-180T1UF ,mode Technology Inc - 300mA High PSRR, Low Noise, LDO Regulators
G916-250T1UF ,mode Technology Inc - 300mA High PSRR, Low Noise, LDO Regulators
FQPF33N10L
100V LOGIC N-Channel MOSFET
September 2000 TM QFET QFET QFET QFET FQPF33N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 18A, 100V, R = 0.052Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 70 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well 175°C maximum junction temperature rating suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control. D ! ! "" !!"" "" G! ! "" G D S TO-220F ! ! S FQPF Series Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQPF33N10L Units V Drain-Source Voltage 100 V DSS I - Continuous (T = 25°C) Drain Current 18 A D C - Continuous (T = 100°C) 12.7 A C I (Note 1) Drain Current - Pulsed 72 A DM V Gate-Source Voltage ± 20 V GSS E (Note 2) Single Pulsed Avalanche Energy 430 mJ AS I Avalanche Current (Note 1) 18 A AR E (Note 1) Repetitive Avalanche Energy 4.1 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns P Power Dissipation (T = 25°C) 41 W D C - Derate above 25°C 0.27 W/°C T , T Operating and Storage Temperature Range -55 to +175 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 3.7 °C/W θJC R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA ©2000 Fairchild Semiconductor International Rev. A, September 2000 FQPF33N10L
