FQPF19N10 ,100V N-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQPF19N20 ,200V N-Channel MOSFET
FQPF19N20C ,200V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect • 19.0A, 200V, R = 0.17Ω @V = 10 VDS(on ..
FQPF19N20C ,200V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect • 19.0A, 200V, R = 0.17Ω @V = 10 VDS(on ..
FQPF1N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 0.9A, 600V, R = 11.5Ω @V = 10 VDS(on) ..
FQPF20N06 ,60V N-Channel MOSFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
G9131-33T73U ,mode Technology Inc - 300mA Low-Dropout Linear Regulators
G914C ,mode Technology Inc - 300mA High PSRR, Low-Noise LDO Regulators
G914CF ,mode Technology Inc - 300mA High PSRR, Low-Noise LDO Regulators
G914D ,mode Technology Inc - 300mA High PSRR, Low-Noise LDO Regulators
G914DF ,mode Technology Inc - 300mA High PSRR, Low-Noise LDO Regulators
G914G ,mode Technology Inc - 300mA High PSRR, Low-Noise LDO Regulators
FQPF19N10
100V N-Channel MOSFET
August 2000 TM QFET QFET QFET QFET FQPF19N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 13.6A, 100V, R = 0.1Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 19 nC) planar stripe, DMOS technology. • Low Crss ( typical 32 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • 175°C maximum junction temperature rating suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. D ! ! "" !!"" "" G! ! "" G D S TO-220F ! ! S FQPF Series Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQPF19N10 Units V Drain-Source Voltage 100 V DSS I - Continuous (T = 25°C) Drain Current 13.6 A D C - Continuous (T = 100°C) 9.6 A C I (Note 1) Drain Current - Pulsed 54.4 A DM V Gate-Source Voltage ± 25 V GSS E (Note 2) Single Pulsed Avalanche Energy 220 mJ AS I Avalanche Current (Note 1) 13.6 A AR E (Note 1) Repetitive Avalanche Energy 3.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns P Power Dissipation (T = 25°C) 38 W D C - Derate above 25°C 0.25 W/°C T , T Operating and Storage Temperature Range -55 to +175 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 3.95 °C/W θJC R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA ©2000 Fairchild Semiconductor International Rev. A, August 2000 FQPF19N10
