FQPF17P06 ,60V P-Channel MOSFETFQPF17P06May 2001TMQFETFQPF17P0660V P-Channel MOSFET
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FQPF18N50V2 ,500V N-Channel MOSFETFQP18N50V2/FQPF18N50V2TMQFETFQP18N50V2/FQPF18N50V2500V N-Channel MOSFET
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FQPF19N20 ,200V N-Channel MOSFET
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FQPF17P06
60V P-Channel MOSFET
FQPF17P06 May 2001 TM QFET FQPF17P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -12A, -60V, R = 0.12Ω @V = -10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 21 nC) planar stripe, DMOS technology. • Low Crss ( typical 80 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand a high energy pulse in the • Improved dv/dt capability avalanche and commutation modes. These devices are • 175°C maximum junction temperature rating well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products. S !!!!!!!! ● ● ● ● ● ● ● ● ● ● ● ● G!!!!!!!! ● ● ● ● ▶ ▶ ▶ ▶ ▶ ▶ ▶ ▶ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● G D !!!! S TO-220F !!!! D FQPF Series Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQPF17P06 Units V Drain-Source Voltage -60 V DSS I - Continuous (T = 25°C) Drain Current -12 A D C - Continuous (T = 100°C) -8.5 A C I (Note 1) Drain Current - Pulsed -48 A DM V Gate-Source Voltage ± 25 V GSS E (Note 2) Single Pulsed Avalanche Energy 300 mJ AS I Avalanche Current (Note 1) -12 A AR E (Note 1) Repetitive Avalanche Energy 3.9 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -7.0 V/ns P Power Dissipation (T = 25°C) 39 W D C - Derate above 25°C 0.25 W/°C T , T Operating and Storage Temperature Range -55 to +175 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 3.85 °C/W θJC R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA ©2001 Rev. A2. May 2001
