FQP16N25C ,250V N-Channel Advance Q-FET C-SeriesFQP16N25C/FQPF16N25C®QFETFQP16N25C/FQPF16N25C250V N-Channel MOSFET
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FQP16N25C-FQPF16N25C
250V N-Channel Advance Q-FET C-Series
FQP16N25C/FQPF16N25C ® QFET FQP16N25C/FQPF16N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 15.6A, 250V, R = 0.27Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 41 nC) planar stripe, DMOS technology. • Low Crss ( typical 68 pF) This advanced technology has been especially tailored to •Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls. D {{ ●● ◀◀ ▲▲ ●● G{{ ●● TO-220 TO-220F G D G S D S FQPF Series FQP Series {{ S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQP16N25C FQPF16N25C Units V Drain-Source Voltage 250 V DSS I - Continuous (T = 25°C) Drain Current 15.6 15.6 * A D C - Continuous (T = 100°C) 9.8 9.8 * A C I (Note 1) Drain Current - Pulsed 62.4 62.4 * A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 410 mJ AS I Avalanche Current (Note 1) 15.6 A AR E (Note 1) Repetitive Avalanche Energy 13.9 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P Power Dissipation (T = 25°C) 139 43 W D C - Derate above 25°C 1.11 0.34 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FQP16N25C FQPF16N25C Units R Thermal Resistance, Junction-to-Case 0.9 2.89 °C/W θJC R Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W θJS R Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W θJA ©2004 Rev. A, March 2004
