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FQP2N80FSCN/a8avai800V N-Channel MOSFET


FQP2N80 ,800V N-Channel MOSFETSeptember 2000TMQFETFQP2N80800V N-Channel MOSFET
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FQP2N80
800V N-Channel MOSFET
September 2000 TM QFET FQP2N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect  2.4A, 800V, R = 6.3Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary,  Low gate charge ( typical 12 nC) planar stripe, DMOS technology.  Low Crss ( typical 5.5 pF) This advanced technology has been especially tailored to  Fast switching minimize on-state resistance, provide superior switching  100% avalanche tested performance, and withstand high energy pulse in the  Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. D ! ! "" 33 55 "" G! ! "" TO-220 G D S ! ! FQP Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQP2N80 Units V Drain-Source Voltage 800 V DSS I - Continuous (T = 25°C) Drain Current 2.4 A D C - Continuous (T = 100°C) 1.52 A C I (Note 1) Drain Current - Pulsed 9.6 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 180 mJ AS I Avalanche Current (Note 1) 2.4 A AR E (Note 1) Repetitive Avalanche Energy 8.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns P Power Dissipation (T = 25°C) 85 W D C - Derate above 25°C 0.68 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 1.47 °C/W θJC R Thermal Resistance, Case-to-Sink 0.5 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA ©2000 Fairchild Semiconductor International Rev. A, September 2000 FQP2N80
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