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FQP1P50FAIRCHILDN/a500avai500V P-Channel MOSFET
FQP1P50FSCN/a20avai500V P-Channel MOSFET


FQP1P50 ,500V P-Channel MOSFETJune 2000TMQFET QFET QFET QFETFQP1P50500V P-Channel MOSFET
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FQP1P50
500V P-Channel MOSFET
June 2000 TM QFET QFET QFET QFET FQP1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -1.5A, -500V, R = 10.5Ω @V = -10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 11 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for electronic lamp ballast based on complementary half bridge. S !!!!!!!! ●●●● ●●●● G!!!!!!!! ●●●●●●●● ▶▶▶▶ ▶▶▶▶ ▲▲▲▲▲▲▲▲ ●●●● ●●●● G D TO-220 S FQP Series !!!! !!!! D Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQP1P50 Units V Drain-Source Voltage -500 V DSS I - Continuous (T = 25°C) Drain Current -1.5 A D C - Continuous (T = 100°C) -0.95 A C I (Note 1) Drain Current - Pulsed -6.0 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 110 mJ AS I Avalanche Current (Note 1) -1.5 A AR E (Note 1) Repetitive Avalanche Energy 6.3 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -4.5 V/ns P Power Dissipation (T = 25°C) 63 W D C - Derate above 25°C 0.51 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 1.98 °C/W θJC R Thermal Resistance, Case-to-Sink 0.5 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA ©2000 Fairchild Semiconductor International Rev. A, June 2000 FQP1P50
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