FQP17N08 ,80V N-Channel MOSFETapplications such as automotive,high efficiency switching for DC/DC converters, and DCmotor contro ..
FQP17N08L ,80V LOGIC N-Channel MOSFETapplications such as automotive, Low level gate drive requirements allowinghigh efficiency switchi ..
FQP17N40 ,400V N-Channel MOSFET
FQP17N40 ,400V N-Channel MOSFET
FQP17P06 ,60V N-Channel MOSFETFQP17P06May 2001TMQFETFQP17P0660V P-Channel MOSFET
FQP17P06 ,60V N-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect • -17A, -60V, R = 0.12Ω @V = -10 VDS(on ..
G767F ,mode Technology Inc - Remote/Local Temperature Sensor with SMBus Serial Interface
G8P-1A4TP , Compact, Low-cost 30-A Power Relay for PC Board or Panel-mounted Applications
G9015 , PNP EPITAXIAL PLANAR TRANSISTOR
G901T21U , 3.3 V 300MA LOW DROPOUT REGULATOR
G901T24U , 3.3 V 300MA LOW DROPOUT REGULATOR
G903T63UF ,mode Technology Inc - 3.3V 600mA Low Dropout Regulator
FQP17N08
80V N-Channel MOSFET
FQP17N08 January 2001 TM QFET QFET QFET QFET FQP17N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 16.5A, 80V, R = 0.115Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 28 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand a high energy pulse in the Improved dv/dt capability avalanche and commutation modes. These devices are 175°C maximum junction temperature rating well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control. D ! ! "" !!"" "" G! ! "" G D S TO-220 ! ! FQP Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQP17N08 Units V Drain-Source Voltage 80 V DSS I - Continuous (T = 25°C) Drain Current 16.5 A D C - Continuous (T = 100°C) 11.6 A C I (Note 1) Drain Current - Pulsed 66 A DM V Gate-Source Voltage ± 25 V GSS E (Note 2) Single Pulsed Avalanche Energy 100 mJ AS I Avalanche Current (Note 1) 16.5 A AR E (Note 1) Repetitive Avalanche Energy 6.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 6.5 V/ns P Power Dissipation (T = 25°C) 65 W D C - Derate above 25°C 0.43 W/°C T , T Operating and Storage Temperature Range -55 to +175 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.31 °C/W θJC R Thermal Resistance, Case-to-Sink 0.5 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA ©2000 Fairchild Semiconductor International Rev. A1, January 2001
