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FQP13N10FAIRCHILDN/a500avai100V N-Channel MOSFET


FQP13N10 ,100V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect  12.8A, 100V, R = 0.18Ω @V = 10 VDS(on ..
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FQP13N10
100V N-Channel MOSFET
FQP13N10 January 2001 TM QFET QFET QFET QFET FQP13N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect  12.8A, 100V, R = 0.18Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary,  Low gate charge ( typical 12 nC) planar stripe, DMOS technology.  Low Crss ( typical 20 pF) This advanced technology has been especially tailored to  Fast switching minimize on-state resistance, provide superior switching  100% avalanche tested performance, and withstand a high energy pulse in the  Improved dv/dt capability avalanche and commutation modes. These devices are  175°C maximum junction temperature rating well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. D ! ! "" !!"" "" G! ! "" G D S TO-220 ! ! FQP Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQP13N10 Units V Drain-Source Voltage 100 V DSS I - Continuous (T = 25°C) Drain Current 12.8 A D C - Continuous (T = 100°C) 9.05 A C I (Note 1) Drain Current - Pulsed 51.2 A DM V Gate-Source Voltage ± 25 V GSS E (Note 2) Single Pulsed Avalanche Energy 95 mJ AS I Avalanche Current (Note 1) 12.8 A AR E (Note 1) Repetitive Avalanche Energy 6.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns P Power Dissipation (T = 25°C) 65 W D C - Derate above 25°C 0.43 W/°C T , T Operating and Storage Temperature Range -55 to +175 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.31 °C/W θJC R Thermal Resistance, Case-to-Sink 0.5 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA ©2000 Fairchild Semiconductor International Rev. A1, January 2001
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