FQPF12N60C ,600V N-Channel Advance Q-FET C-SeriesFQP12N60C/FQPF12N60CTMQFETFQP12N60C/FQPF12N60C600V N-Channel MOSFET
FQPF12N60C. ,600V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 12A, 600V, R = 0.65Ω @V = 10 VDS(on) ..
FQPF12N60CT ,600V N-Channel MOSFET
FQPF12N60CT ,600V N-Channel MOSFET
FQPF12N60CT. ,600V N-Channel MOSFET
FQPF12P10 ,100V P-Channel MOSFET
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G910T65UF ,mode Technology Inc - 3.3V 600mA/250mA Low Dropout Regulator
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FQP12N60C -FQPF12N60C-FQPF12N60C.
600V N-Channel Advance Q-FET C-Series
FQP12N60C/FQPF12N60C TM QFET FQP12N60C/FQPF12N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 12A, 600V, R = 0.65Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 48 nC) planar stripe, DMOS technology. Low Crss ( typical 21 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D !!!!!!!! ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● G!!!!!!!! ● ● ● ● ● ● ● ● TO-220 TO-220F G D S G D S FQP Series FQPF Series !!!!!!!! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQP12N60C FQPF12N60C Units V Drain-Source Voltage 600 V DSS I - Continuous (T = 25°C) Drain Current 12 12 * A D C - Continuous (T = 100°C) 7.4 7.4 * A C I (Note 1) Drain Current - Pulsed 48 48 * A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 870 mJ AS I Avalanche Current (Note 1) 12 A AR E (Note 1) Repetitive Avalanche Energy 22.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 225 51 W D C - Derate above 25°C 1.78 0.41 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FQP12N60C FQPF12N60C Units R Thermal Resistance, Junction-to-Case 0.56 2.43 °C/W θJC R Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W θJS R Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W θJA ©2003 Rev. B, October 2003
