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FQP12N60FAIRCHILDN/a500avai600V N-Channel MOSFET


FQP12N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect  10.5A, 600V, R = 0.7 Ω @ V = 10 VDS(o ..
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FQP12N60
600V N-Channel MOSFET
April 2000 TM QFET QFET QFET QFET FQP12N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect  10.5A, 600V, R = 0.7 Ω @ V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary,  Low gate charge ( typical 42 nC) planar stripe, DMOS technology.  Low Crss ( typical 25 pF) This advanced technology has been especially tailored to  Fast switching minimize on-state resistance, provide superior switching  100% avalanche tested performance, and withstand high energy pulse in the  Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. D ! ! "" !!"" "" G! ! "" G D TO-220 S ! ! FQP Series S Absolute Maximum Ratings �� T = 25°C unless otherwise noted C Symbol Parameter FQP12N60 Units V Drain-Source Voltage 600 V DSS I - Continuous (T = 25°C) Drain Current 10.5 A D C - Continuous (T = 100°C) 6.7 A C I (Note 1) Drain Current - Pulsed 42 A DM V Gate-Source Voltage ±�30 V GSS E (Note 2) Single Pulsed Avalanche Energy 790 mJ AS I Avalanche Current (Note 1) 10.5 A AR E (Note 1) Repetitive Avalanche Energy 18 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 � V ns P Power Dissipation (T = 25°C) 180 W D C - Derate above 25°C 1.43 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8� from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 0.7 °C�W θJC R Thermal Resistance, Case-to-Sink 0.5 -- °C�W θCS R Thermal Resistance, Junction-to-Ambient -- 62.5 °C�W θJA ©2000 Fairchild Semiconductor International Rev. A, April 2000 FQP12N60
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