FQP11P06 ,60V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect • -11.4A, -60V, R = 0.175Ω @V = -10 VDS ..
FQP12N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 10.5A, 600V, R = 0.7 Ω @ V = 10 VDS(o ..
FQP12N60C ,600V N-Channel Advance Q-FET C-SeriesFQP12N60C/FQPF12N60CTMQFETFQP12N60C/FQPF12N60C600V N-Channel MOSFET
FQP12P10 ,100V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect • -11.5A, -100V, R = 0.29Ω @V = -10 VDS ..
FQP13N06 ,60V N-Channel MOSFETapplications such as DC/DCconverters, high efficiency switching for powermanagement in portable and ..
FQP13N06L ,60V LOGIC N-Channel MOSFETFQP13N06LMay 2001TMQFETFQP13N06L60V LOGIC N-Channel MOSFET
G751-2 , Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
G751-2P1 ,mode Technology Inc - Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
G760A , Fan Speed PWM Controller
G767F ,mode Technology Inc - Remote/Local Temperature Sensor with SMBus Serial Interface
G8P-1A4TP , Compact, Low-cost 30-A Power Relay for PC Board or Panel-mounted Applications
G9015 , PNP EPITAXIAL PLANAR TRANSISTOR
FQP11P06
60V P-Channel MOSFET
FQP11P06 May 2001 TM QFET FQP11P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -11.4A, -60V, R = 0.175Ω @V = -10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13 nC) planar stripe, DMOS technology. • Low Crss ( typical 45 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand a high energy pulse in the • Improved dv/dt capability avalanche and commutation modes. These devices are • 175°C maximum junction temperature rating well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products. S !!!!!!!! ● ● ● ● ● ● ● ● G!!!!!!!! ● ● ● ● ● ● ● ● ▶ ▶ ▶ ▶ ▶ ▶ ▶ ▶ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● G D TO-220 S FQP Series !!!! !!!! D Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQP11P06 Units V Drain-Source Voltage -60 V DSS I - Continuous (T = 25°C) Drain Current -11.4 A D C - Continuous (T = 100°C) -8.05 A C I (Note 1) Drain Current - Pulsed -45.6 A DM V Gate-Source Voltage ± 25 V GSS E (Note 2) Single Pulsed Avalanche Energy 160 mJ AS I Avalanche Current (Note 1) -11.4 A AR E (Note 1) Repetitive Avalanche Energy 5.3 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -7.0 V/ns P Power Dissipation (T = 25°C) 53 W D C - Derate above 25°C 0.35 W/°C T , T Operating and Storage Temperature Range -55 to +175 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.85 °C/W θJC R Thermal Resistance, Case-to-Sink 0.5 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA ©2001 Rev. A4. May 2001
