FQP11N40C ,400V N-Channel Advanced QFET C-seriesFQP11N40C/FQPF11N40C ®QFETFQP11N40C/FQPF11N40C400V N-Channel MOSFET
FQP11N40C ,400V N-Channel Advanced QFET C-seriesFQP11N40C/FQPF11N40C ®QFETFQP11N40C/FQPF11N40C400V N-Channel MOSFET
FQP11N40C ,400V N-Channel Advanced QFET C-seriesFeaturesThese N-Channel enhancement mode power field effect • 10.5 A, 400V, R = 0.5 Ω @V = 10 VD ..
FQP11N40C ,400V N-Channel Advanced QFET C-seriesFQP11N40C/FQPF11N40C ®QFETFQP11N40C/FQPF11N40C400V N-Channel MOSFET
FQP11N50CF , 500V N-Channel MOSFET
FQP11N50CF , 500V N-Channel MOSFET
G751-2 , Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
G751-2P1 ,mode Technology Inc - Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
G760A , Fan Speed PWM Controller
G767F ,mode Technology Inc - Remote/Local Temperature Sensor with SMBus Serial Interface
G8P-1A4TP , Compact, Low-cost 30-A Power Relay for PC Board or Panel-mounted Applications
G9015 , PNP EPITAXIAL PLANAR TRANSISTOR
FQP11N40C-FQPF11N40C
400V N-Channel Advanced QFET C-series
FQP11N40C/FQPF11N40C ® QFET FQP11N40C/FQPF11N40C 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 10.5 A, 400V, R = 0.5 Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 28 nC) planar stripe, DMOS technology. • Low Crss ( typical 85pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D !!!!!!!! ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● G!!!!!!!! ● ● ● ● ● ● ● ● TO-220 TO-220F G D S G D S FQP Series FQPF Series !!!!!!!! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQP11N40C FQPF11N40C Units V Drain-Source Voltage 400 V DSS I - Continuous (T = 25°C) Drain Current 10.5 10.5 * A D C - Continuous (T = 100°C) 6.6 6.6 * A C I (Note 1) Drain Current - Pulsed 42 42 * A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 360 mJ AS I Avalanche Current (Note 1) 11 A AR E (Note 1) Repetitive Avalanche Energy 13.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 135 44 W D C - Derate above 25°C 1.07 0.35 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FQP11N40C FQPF11N40C Units R Thermal Resistance, Junction-to-Case 0.93 2.86 °C/W θJC R Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W θJA ©2004 Rev. B, January 2004
