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FQB7N10LTMFAIRCHILDN/a740avai100V N-Channel Logic Level QFET
FQB7N10LTMFSCN/a800avai100V N-Channel Logic Level QFET
FQI7N10LTUFSCN/a2000avai100V N-Channel Logic Level QFET


FQI7N10LTU ,100V N-Channel Logic Level QFETapplications such as high Low level gate drive requirments allowingefficiency switching DC/DC conv ..
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FQB7N10LTM-FQI7N10LTU
100V N-Channel Logic Level QFET
FQB7N10L / FQI7N10L December 2000 TM QFET QFET QFET QFET FQB7N10L / FQI7N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect  7.3A, 100V, R = 0.35Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary,  Low gate charge ( typical 4.6 nC) planar stripe, DMOS technology.  Low Crss ( typical 12 pF) This advanced technology is especially tailored to minimize  Fast switching on-state resistance, provide superior switching  100% avalanche tested performance, and withstand high energy pulse in the  Improved dv/dt capability avalanche and commutation modes. These devices are  175°C maximum junction temperature rating well suited for low voltage applications such as high  Low level gate drive requirments allowing efficiency switching DC/DC converters, and DC motor direct operationfrom logic drives control. D D ! ! "" !!"" "" G! ! "" G S 2 2 D -PAK I -PAK G D S ! ! FQB Series FQI Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQB7N10L / FQI7N10L Units V Drain-Source Voltage 100 V DSS I - Continuous (T = 25°C) Drain Current 7.3 A D C - Continuous (T = 100°C) 5.15 A C I (Note 1) Drain Current - Pulsed 29.2 A DM V Gate-Source Voltage ± 20 V GSS E (Note 2) Single Pulsed Avalanche Energy 50 mJ AS I Avalanche Current (Note 1) 7.3 A AR E (Note 1) Repetitive Avalanche Energy 4.0 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns Power Dissipation (T = 25°C) * 3.75 W P A D Power Dissipation (T = 25°C) 40 W C - Derate above 25°C 0.27 W/°C T , T Operating and Storage Temperature Range -55 to +175 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 3.75 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev. A2, December 2000
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