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FQB5P10TMFAIRCHILN/a800avai100V P-Channel QFET
FQI5P10TUFSCN/a2000avai100V P-Channel QFET


FQI5P10TU ,100V P-Channel QFETFeaturesThese P-Channel enhancement mode power field effect • -4.5A, -100V, R = 1.05Ω @V = -10 VDS( ..
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FQB5P10TM-FQI5P10TU
100V P-Channel QFET
FQB5P10 / FQI5P10 TM QFET FQB5P10 / FQI5P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -4.5A, -100V, R = 1.05Ω @V = -10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. • Low Crss ( typical 18 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • 175°C maximum junction temperature rating suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. D D G GS 2 2 D -PAK I -PAK GS D FQB Series FQI Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQB5P10 / FQI5P10 Units V Drain-Source Voltage -100 V DSS I - Continuous (T = 25°C) Drain Current -4.5 A D C - Continuous (T = 100°C) -3.18 A C I (Note 1) Drain Current - Pulsed -18 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 55 mJ AS I Avalanche Current (Note 1) -4.5 A AR E (Note 1) Repetitive Avalanche Energy 4.0 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -6.0 V/ns Power Dissipation (T = 25°C) * 3.75 W P A D Power Dissipation (T = 25°C) 40 W C - Derate above 25°C 0.27 W/°C T , T Operating and Storage Temperature Range -55 to +175 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 3.75 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2002 Rev. B, August 2002
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