FQI34P10 ,100V P-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQI3N25TU ,250V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect 2.8A, 250V, R = 2.2Ω @V = 10 VDS(on) ..
FQI3N90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 3.6A, 900V, R = 4.25 Ω @ V = 10 VDS(o ..
FQI3P20TU ,200V P-Channel QFETFeaturesThese P-Channel enhancement mode power field effect -2.8A, -200V, R = 2.7Ω @V = -10 VDS(o ..
FQI3P50TU ,500V P-Channel QFETAugust 2000TMQFET QFET QFET QFETFQB3P50 / FQI3P50500V P-Channel MOSFET
FQI3P50TU ,500V P-Channel QFETAugust 2000TMQFET QFET QFET QFETFQB3P50 / FQI3P50500V P-Channel MOSFET
G751-2 , Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
G751-2P1 ,mode Technology Inc - Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
G760A , Fan Speed PWM Controller
G767F ,mode Technology Inc - Remote/Local Temperature Sensor with SMBus Serial Interface
G8P-1A4TP , Compact, Low-cost 30-A Power Relay for PC Board or Panel-mounted Applications
G9015 , PNP EPITAXIAL PLANAR TRANSISTOR
FQI34P10
100V P-Channel MOSFET
FQB34P10 / FQI34P10 ® QFET FQB34P10 / FQI34P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -33.5A, -100V, R = 0.06Ω @V = -10 V DS(on) GS transistors are produced using Fairchilds proprietary, Low gate charge ( typical 85 nC) planar stripe, DMOS technology. Low Crss ( typical 170 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well 175°C maximum junction temperature rating suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. S !!!!!!!! D ● ●● ● ● ●● ● G!!!!!!!! ● ● ● ●● ● ● ● ▶ ▶ ▶ ▶ ▶ ▶ ▶ ▶ ▲▲▲▲▲▲▲▲ ● ●● ● 2 ● ●● ● 2 I -PAK D -PAK GS FQI Series FQB Series GS D !!!! !!!! D Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQB34P10 / FQI34P10 Units V Drain-Source Voltage -100 V DSS I - Continuous (T = 25°C) Drain Current -33.5 A D C - Continuous (T = 100°C) -23.5 A C I (Note 1) Drain Current - Pulsed -134 A DM V Gate-Source Voltage ± 25 V GSS E (Note 2) Single Pulsed Avalanche Energy 2200 mJ AS I Avalanche Current (Note 1) -33.5 A AR E (Note 1) Repetitive Avalanche Energy 15.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -6.0 V/ns Power Dissipation (T = 25°C) * 3.75 W P A D Power Dissipation (T = 25°C) 155 W C - Derate above 25°C 1.03 W/°C T , T Operating and Storage Temperature Range -55 to +175 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 0.97 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2004 Rev. B, June 2004
