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FQD6N40CFSCN/a7avai400V N-Channel Advance QFET C-Series
FQD6N40CTFFAIRCHILDN/a1389avai400V N-Channel Advance QFET C-Series
FQD6N40CTMN/a4500avai400V N-Channel Advance QFET C-Series
FQD6N40CTMN/AN/a4500avai400V N-Channel Advance QFET C-Series


FQD6N40CTM ,400V N-Channel Advance QFET C-SeriesFeaturesThese N-Channel enhancement mode power field effect  4.5A, 400V, R = 1.0 Ω @V = 10 VDS(o ..
FQD6N40CTM ,400V N-Channel Advance QFET C-SeriesFQD6N40C / FQU6N40C TMQFETFQD6N40C / FQU6N40C400V N-Channel MOSFET
FQD6N50C ,500V N-Channel Advance Q-FET C-SeriesFQD6N50C / FQU6N50C ®QFETFQD6N50C / FQU6N50C500V N-Channel MOSFET
FQD6N50CTM ,500V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect • 4.5A, 500V, R = 1.2 Ω @V = 10 VDS(on) ..
FQD6N60C ,600V N-Channel MOSFETFeatures Description• 4 A, 600 V, R = 2.0 Ω @ V = 10 V These N-Channel enhancement mode power field ..
FQD6P25 ,250V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect  -4.7A, -250V, R = 1.1Ω @V = -10 VDS(o ..
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FQD6N40C-FQD6N40CTF-FQD6N40CTM
400V N-Channel Advance QFET C-Series
FQD6N40C / FQU6N40C TM QFET FQD6N40C / FQU6N40C 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect  4.5A, 400V, R = 1.0 Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary,  Low gate charge ( typical 16nC) planar stripe, DMOS technology.  Low Crss ( typical 15pF) This advanced technology has been especially tailored to  Fast switching minimize on-state resistance, provide superior switching  100% avalanche tested performance, and withstand high energy pulse in the  Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology. D !!!!!!!! D ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● G!!!!!!!! ● ● ● ● ● ● ● ● I-PAK D-PAK GS FQD Series FQU Series GS D !!!!!!!! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQD6N40C / FQU6N40C Units V Drain-Source Voltage 400 V DSS I - Continuous (T = 25°C) Drain Current 4.5 A D C - Continuous (T = 100°C) 2.7 A C I (Note 1) Drain Current - Pulsed 18 A DM V Gate-Source Voltage ± 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 270 mJ AS I Avalanche Current (Note 1) 4.5 A AR E Repetitive Avalanche Energy (Note 1) 4.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns Power Dissipation (T = 25°C)* 2.5 W A P D Power Dissipation (T = 25°C) 48 W C - Derate above 25°C 0.38 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.6 °C/W θJC R Thermal Resistance, Junction-to-Ambient.* -- 50 °C/W θJA R Thermal Resistance, Junction-to-Ambient. -- 110 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2003 Rev. A, October 2003
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