FQD60N03LTM ,30V N-Channel Logic Level MOSFETsApplications ISS• DC/DC convertersDRAIN (FLANGE)DGATEGSOURCESTO-252AAFDD SERIESMOSFET Maximum Ratin ..
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FQD60N03LTM
30V N-Channel Logic Level MOSFETs
FQD60N03L April 2004 FQD60N03L N-Channel Logic Level MOSFETs 30V, 30A, 0.023 W Features • Fast switching General Description This device employs advanced MOSFET technology and • r = 0.014W (Typ), V = 10V DS(ON) GS features low gate charge while maintaining low on- • r = 0.024W (Typ), V = 4.5V resistance. DS(ON) GS • Q (Typ) = 9.6nC, V = 5V Optimized for switching applications, this device improves g GS the overall efficiency of DC/DC converters and allows • Q (Typ) = 3.4nC operation to higher switching frequencies. gd • C (Typ) = 900pF Applications ISS • DC/DC converters DRAIN (FLANGE) D GATE G SOURCE S TO-252AA FDD SERIES MOSFET Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 30 A Continuous (T = 25 C, V = 10V) C GS o I Continuous (T = 100 C, V = 4.5V) 19 A D C GS o o Continuous (T = 25 C, V = 10V, R = 52 C/W) 7.9 A C GS qJA Pulsed Figure 4 A Power dissipation 45 W P D o o Derate above 25 C 0.37 W/ C o T , T Operating and Storage Temperature -55 to 150 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-252 2.73 C/W qJC o R Thermal Resistance Junction to Ambient TO-252 100 C/W qJA 2 o R Thermal Resistance Junction to Ambient TO-252, 1in copper pad area 52 C/W qJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FQD60N03L FQD60N03L TO-252AA 330mm 16mm 2500 units ©2004 FQD60N03L Rev. B1
