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FQD24N08TM
80V N-Channel QFET
August 2000 TM QFET QFET QFET QFET FQD24N08 / FQU24N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 19.6A, 80V, R = 0.06Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 50 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control. D D ! ! "" !!"" "" G! ! "" D-PAK I-PAK G S FQD Series G FQU Series D S ! ! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQD24N08 / FQU24N08 Units V Drain-Source Voltage 80 V DSS I - Continuous (T = 25°C) Drain Current 19.6 A D C - Continuous (T = 100°C) 12.4 A C I (Note 1) Drain Current - Pulsed 78.4 A DM V Gate-Source Voltage ± 25 V GSS E (Note 2) Single Pulsed Avalanche Energy 230 mJ AS I Avalanche Current (Note 1) 19.6 A AR E (Note 1) Repetitive Avalanche Energy 5.0 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 6.5 V/ns Power Dissipation (T = 25°C) * 2.5 W P A D Power Dissipation (T = 25°C) 50 W C - Derate above 25°C 0.4 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.5 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 50 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 110 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev. A, August 2000 FQD24N08 / FQU24N08
