FQB9N50CTM ,500V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 9 A, 500V, R = 0.8 Ω @V = 10 VDS(o ..
FQB9N50TM ,500V N-Channel QFET
FQB9P25 ,250V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect -9.4A, -250V, R = 0.62Ω @V = -10 VDS( ..
FQB9P25TM ,250V P-Channel QFETFeaturesThese P-Channel enhancement mode power field effect -9.4A, -250V, R = 0.62Ω @V = -10 VDS( ..
FQD10N20 ,200V N-Channel MOSFET
FQD10N20 ,200V N-Channel MOSFET
G6H-2F , Low Profile, Miniature, Surface Mount Relay
G6H-2F5VDC , Low Profile, Miniature, Surface Mount Relay
G6J-2FL-Y , Surface-mounting Relay
G6XB60 , SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 to 1000V Current: 6.0A
G751-2 , Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
G751-2P1 ,mode Technology Inc - Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
FQB9N50C-FQB9N50CTM-FQI9N50CTU
500V N-Channel Advance Q-FET C-Series
FQB9N50C/FQI9N50C TM QFET FQB9N50C/FQI9N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9 A, 500V, R = 0.8 Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 24 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D ! ! D "" !!"" "" ! ! G 2 "" 2 I -PAK D -PAK GS FQI Series FQB Series ! ! GS D S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQB9N50C/FQI9N50C Units V Drain-Source Voltage 500 V DSS I - Continuous (T = 25°C) Drain Current 9A D C - Continuous (T = 100°C) 5.4 A C I (Note 1) Drain Current - Pulsed 36 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 360 mJ AS I Avalanche Current (Note 1) 9A AR E (Note 1) Repetitive Avalanche Energy 13.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 135 W D C - Derate above 25°C 1.07 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 0.93 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA ©2003 Rev. A, August 2003
