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FQB9N08FAIRCHILDN/a746avai80V N-Channel MOSFET


FQB9N08 ,80V N-Channel MOSFETapplications such as automotive,high efficiency switching for DC/DC converters, and DCmotor control ..
FQB9N08L ,80V LOGIC N-Channel MOSFETapplications such as automotive, high• Low level gate drive requirments allowingefficiency switchin ..
FQB9N08LTM ,80V N-Channel Logic Level QFETJune 2000TMQFET QFET QFET QFETFQB9N08L / FQI9N08L80V LOGIC N-Channel MOSFET
FQB9N08LTM ,80V N-Channel Logic Level QFETFeaturesThese N-Channel enhancement mode power field effect • 9.3A, 80V, R = 0.21Ω @V = 10 VDS(on) ..
FQB9N08TM ,80V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect  9.3A, 80V, R = 0.21Ω @V = 10 VDS(on) ..
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FQB9N08
80V N-Channel MOSFET
FQB9N08 / FQI9N08 December 2000 TM QFET QFET QFET QFET FQB9N08 / FQI9N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect  9.3A, 80V, R = 0.21Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary,  Low gate charge ( typical 5.9 nC) planar stripe, DMOS technology.  Low Crss ( typical 13 pF) This advanced technology is especially tailored to minimize  Fast switching on-state resistance, provide superior switching  100% avalanche tested performance, and withstand a high energy pulse in the  Improved dv/dt capability avalanche and commutation modes. These devices are  175°C maximum junction temperature rating well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control. D D ! ! "" !!"" "" G! ! "" G S 2 2 D -PAK I -PAK G D S ! ! FQB Series FQI Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQB9N08 / FQI9N08 Units V Drain-Source Voltage 80 V DSS I - Continuous (T = 25°C) Drain Current 9.3 A D C - Continuous (T = 100°C) 6.57 A C I (Note 1) Drain Current - Pulsed 37.2 A DM V Gate-Source Voltage ± 25 V GSS E (Note 2) Single Pulsed Avalanche Energy 55 mJ AS I Avalanche Current (Note 1) 9.3 A AR E (Note 1) Repetitive Avalanche Energy 4.0 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 6.5 V/ns Power Dissipation (T = 25°C) * 3.75 W P A D Power Dissipation (T = 25°C) 40 W C - Derate above 25°C 0.27 W/°C T , T Operating and Storage Temperature Range -55 to +175 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8” from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 3.75 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev. A2, December 2000
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