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FQB95N03LTMFAIRCHILN/a800avai30V N-Channel Logic PWM Optimezed Power MOSFET
FQB95N03LTMFAIRCHILDN/a664avai30V N-Channel Logic PWM Optimezed Power MOSFET


FQB95N03LTM ,30V N-Channel Logic PWM Optimezed Power MOSFETApplications• DC/DC convertersC (Typ) = 2600pFISSDRAIND (FLANGE)GATEGSOURCESTO-263ABMOSFET Maximum ..
FQB95N03LTM ,30V N-Channel Logic PWM Optimezed Power MOSFETapplications, this device improvesDS(ON) GSthe overall efficiency of DC/DC converters and allowsQ ..
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FQB95N03LTM
30V N-Channel Logic PWM Optimezed Power MOSFET
FQB95N03L December 2002 FQB95N03L N-Channel Logic Level PWM Optimized Power MOSFET General Description Features This device employs a new advanced trench MOSFETFast switching technology and features low gate charge while maintaining r = 0.0064Ω (Typ), V = 10V low on-resistance. DS(ON) GS r = 0.010Ω (Typ), V = 5V Optimized for switching applications, this device improves DS(ON) GS the overall efficiency of DC/DC converters and allows Q (Typ) = 24nC, V = 5V operation to higher switching frequencies. g GS Q (Typ) = 8nC gd Applications • DC/DC converters C (Typ) = 2600pF ISS DRAIN D (FLANGE) GATE G SOURCE S TO-263AB MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DSS V Gate to Source Voltage ±16 V GS Drain Current o 75 A Continuous (T = 25 C, V = 10V) C GS o I Continuous (T = 100 C, V = 4.5V) 48 A D C GS o o Continuous (T = 25 C, V = 10V, R = 43 C/W) 15 A C GS θJA Pulsed Figure 4 A Power dissipation 80 W P D o o Derate above 25 C 0.65 W/ C o T , T Operating and Storage Temperature -55 to 150 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-263 1.5 C/W θJC o R Thermal Resistance Junction to Ambient TO-263 62 C/W θJA 2 o R Thermal Resistance Junction to Ambient TO-263, 1in copper pad area 43 C/W θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FQB95N03L FQB95N03L TO-263AB 330mm 24mm 800 units ©2002 FQB95N03L Rev. B1
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