FQB90N08 ,80V N-Channel MOSFETapplications such as automotive,high efficiency switching for DC/DC converters, and DCmotor control ..
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FQB9N08 ,80V N-Channel MOSFETapplications such as automotive,high efficiency switching for DC/DC converters, and DCmotor control ..
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FQB90N08
80V N-Channel MOSFET
FQB90N08 / FQI90N08 January 2001 TM QFET QFET QFET QFET FQB90N08 / FQI90N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 71A, 80V, R = 0.016Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 84 nC) planar stripe, DMOS technology. Low Crss ( typical 200 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand a high energy pulse in the Improved dv/dt capability avalanche and commutation modes. These devices are 175°C maximum junction temperature rating well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control. D D ! ! "" !!"" "" G! ! "" G S 2 2 D -PAK I -PAK G D S ! ! FQB Series FQI Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQB90N08 / FQI90N08 Units V Drain-Source Voltage 80 V DSS I - Continuous (T = 25°C) Drain Current 71 A D C - Continuous (T = 100°C) 50.2 A C I (Note 1) Drain Current - Pulsed 284 A DM V Gate-Source Voltage ± 25 V GSS E (Note 2) Single Pulsed Avalanche Energy 1360 mJ AS I Avalanche Current (Note 1) 71 A AR E (Note 1) Repetitive Avalanche Energy 16 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 6.5 V/ns Power Dissipation (T = 25°C) * 3.75 W P A D Power Dissipation (T = 25°C) 160 W C - Derate above 25°C 1.06 W/°C T , T Operating and Storage Temperature Range -55 to +175 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 0.94 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev. A1, January 2001
