FQB33N10 ,100V N-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQB33N10L ,100V LOGIC N-Channel MOSFETapplications such as high efficiencyswitching DC/DC converters, and DC motor control.D D! !""!!"""" ..
FQB33N10LTM ,100V N-Channel Logic Level QFETapplications such as high efficiencyswitching DC/DC converters, and DC motor control.D D! !""!!"""" ..
FQB33N10TM ,100V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect 33A, 100V, R = 0.052Ω @V = 10 VDS(on) ..
FQB33N10TM ,100V N-Channel QFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQB34N20 ,200V N-Channel MOSFET
G6AK-274P-STLT-US-DC5 , Fullly Sealed Relay with High Impulse Withstand
G6H-2F , Low Profile, Miniature, Surface Mount Relay
G6H-2F5VDC , Low Profile, Miniature, Surface Mount Relay
G6J-2FL-Y , Surface-mounting Relay
G6XB60 , SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 to 1000V Current: 6.0A
G751-2 , Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
FQB33N10
100V N-Channel MOSFET
April 2000 TM QFET QFET QFET QFET FQB33N10 / FQI33N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 33A, 100V, R = 0.052Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 38 nC) planar stripe, DMOS technology. Low Crss ( typical 62 pF) This advanced technology has been especially tailored to Fast switching. minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well 175°C maximum junction temperature rating suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. D D ! ! "" !!"" "" G! ! "" G S 2 2 D -PAK I -PAK G D S ! ! FQB Series FQI Series S Absolute Maximum Ratings �� T = 25°C unless otherwise noted C Symbol Parameter FQB33N10 / FQI33N10 Units V Drain-Source Voltage 100 V DSS I - Continuous (T = 25°C) Drain Current 33 A D C - Continuous (T = 100°C) 23 A C I (Note 1) Drain Current - Pulsed 132 A DM V Gate-Source Voltage ±�25 V GSS E (Note 2) Single Pulsed Avalanche Energy 435 mJ AS I Avalanche Current (Note 1) 33 A AR E (Note 1) Repetitive Avalanche Energy 12.7 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns Power Dissipation (T = 25°C) * 3.75 W P A D Power Dissipation (T = 25°C) 127 W C - Derate above 25°C 0.85 W/°C T , T Operating and Storage Temperature Range -55 to +175 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8� from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 1.18 °C�W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C�W θJA R � Thermal Resistance, Junction-to-Ambient -- 62.5 °C W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev. A, April 2000 FQB33N10 / FQI33N10
