FQB32N12V2 ,120V N-Channel Advanced QFET V2 seriesapplications lowest Rds(on) is required.D! !D""!!""""G! !""22 I -PAKD -PAKGS FQI SeriesFQB Series ! ..
FQB32N20C ,200V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect • 28A, 200V, R = 0.082Ω @V = 10 VDS(on) ..
FQB32N20CTM ,200V N-Channel Advance Q-FET C-SeriesFQB32N20C/FQI32N20C®QFETFQB32N20C/FQI32N20C200V N-Channel MOSFET
FQB33N10 ,100V N-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQB33N10L ,100V LOGIC N-Channel MOSFETapplications such as high efficiencyswitching DC/DC converters, and DC motor control.D D! !""!!"""" ..
FQB33N10LTM ,100V N-Channel Logic Level QFETapplications such as high efficiencyswitching DC/DC converters, and DC motor control.D D! !""!!"""" ..
G6AK-274P-STLT-US-DC5 , Fullly Sealed Relay with High Impulse Withstand
G6H-2F , Low Profile, Miniature, Surface Mount Relay
G6H-2F5VDC , Low Profile, Miniature, Surface Mount Relay
G6J-2FL-Y , Surface-mounting Relay
G6XB60 , SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 to 1000V Current: 6.0A
G751-2 , Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
FQB32N12V2
120V N-Channel Advanced QFET V2 series
FQB32N12V2/FQI32N12V2 ® QFET FQB32N12V2/FQI32N12V2 120V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 32A, 120V, R = 0.05Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 41 nC) planar stripe, DMOS technology. • Low Crss ( typical 70 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for DC to DC converters, sychronous rectification, and other applications lowest Rds(on) is required. D ! ! D "" !!"" "" G! ! "" 2 2 I -PAK D -PAK GS FQI Series FQB Series ! ! GS D S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQB32N12V2/FQI32N12V2 Units V Drain-Source Voltage 120 V DSS I - Continuous (T = 25°C) Drain Current 32 A D C - Continuous (T = 100°C) 23 A C I (Note 1) Drain Current - Pulsed 128 A DM V Gate-Source Voltage ± 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 439 mJ AS I Avalanche Current (Note 1) 32 A AR E Repetitive Avalanche Energy (Note 1) 15 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns Power Dissipation (T = 25°C) * 3.75 W A P D Power Dissipation (T = 25°C) 150 W C - Derate above 25°C 1 W/°C T , T Operating and Storage Temperature Range -55 to +175 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 1.0 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2003 Rev. A, December 2003
