FQB13N10LTM ,100V N-Channel Logic Level QFETapplications such as highefficiency switching DC/DC converters, and DC motorcontrol.D D! !""!!""""G ..
FQB13N10TM ,100V N-Channel QFETapplications such as audioamplifier, high efficiency switching DC/DC converters, andDC motor contro ..
FQB13N50C ,500V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 13A, 500V, R = 0.48Ω @V = 10 VDS(on) ..
FQB13N50CTM ,500V N-Channel Advance Q-FET C-SeriesFQB13N50C/FQI13N50C TMQFETFQB13N50C/FQI13N50C500V N-Channel MOSFET
FQB140N03L ,30V LOGIC N-Channel MOSFETapplications such as DC/DCconverters, high efficiency switching for powermanagement in portable and ..
FQB14N30 ,150V N-Channel MOSFET
G696H263T1Uf ,mode Technology Inc - Microprocessor Reset IC
G696L263T1UF ,mode Technology Inc - Microprocessor Reset IC
G697L263T1U ,mode Technology Inc - Microprocessor Reset IC
G697L263T1UF ,mode Technology Inc - Microprocessor Reset IC
G697L293T1UF ,mode Technology Inc - Microprocessor Reset IC
G697L330T1U ,mode Technology Inc - Microprocessor Reset IC
FQB13N10LTM
100V N-Channel Logic Level QFET
FQB13N10L / FQI13N10L December 2000 TM QFET QFET QFET QFET FQB13N10L / FQI13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 12.8A, 100V, R = 0.18Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 8.7 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology is especially tailored to minimize Fast switching on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation modes. These devices are 175°C maximum junction temperature rating well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control. D D ! ! "" !!"" "" G! ! "" G S 2 2 D -PAK I -PAK G D S ! ! FQB Series FQI Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQB13N10L / FQI13N10L Units V Drain-Source Voltage 100 V DSS I - Continuous (T = 25°C) Drain Current 12.8 A D C - Continuous (T = 100°C) 9.05 A C I (Note 1) Drain Current - Pulsed 51.2 A DM V Gate-Source Voltage ± 20 V GSS E (Note 2) Single Pulsed Avalanche Energy 95 mJ AS I Avalanche Current (Note 1) 12.8 A AR E (Note 1) Repetitive Avalanche Energy 6.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns Power Dissipation (T = 25°C) * 3.75 W P A D Power Dissipation (T = 25°C) 65 W C - Derate above 25°C 0.43 W/°C T , T Operating and Storage Temperature Range -55 to +175 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8” from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.31 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev. A4, December 2000
