FQA65N20 ,200V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 65A, 200V, R = 0.032Ω @V = 10 VDS(on) ..
FQA65N20 ,200V N-Channel MOSFETFQA65N20August 2001TMQFETFQA65N20200V N-Channel MOSFET
FQA65N20 ,200V N-Channel MOSFETFQA65N20August 2001TMQFETFQA65N20200V N-Channel MOSFET
FQA65N20 ,200V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 65A, 200V, R = 0.032Ω @V = 10 VDS(on) ..
FQA6N70 ,700V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 6.4A, 700V, R = 1.5 Ω @ V = 10 VDS(on ..
FQA6N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 6.3A, 800V, R = 1.95Ω @V = 10 VDS(on) ..
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FQA65N20
200V N-Channel MOSFET
FQA65N20 August 2001 TM QFET FQA65N20 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 65A, 200V, R = 0.032Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 170 nC) planar stripe, DMOS technology. • Low Crss ( typical 90 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterrupted power supply, motor control. D ! ! "" !!"" "" G! ! "" TO-3P ! ! G D S S FQA Series Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQA65N20 Units V Drain-Source Voltage 200 V DSS I - Continuous (T = 25°C) Drain Current 65 A D C - Continuous (T = 100°C) 41 A C I (Note 1) Drain Current - Pulsed 260 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 1010 mJ AS I Avalanche Current (Note 1) 65 A AR E (Note 1) Repetitive Avalanche Energy 31 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P Power Dissipation (T = 25°C) 310 W D C - Derate above 25°C 2.5 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 0.4 °C/W θJC R Thermal Resistance, Case-to-Sink 0.24 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient -- 40 °C/W θJA ©2001 Rev. A1, August 2001
