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FQA13N50C
500V N-Channel Advance Q-FET C-Series
FQA13N50C ® QFET FQA13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 13.5A, 500V, R = 0.48Ω @V = 10 V DS(on) GS transistors are produced using Fairchilds proprietary, Low gate charge ( typical 43 nC) planar stripe, DMOS technology. Low Crss ( typical 20pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D !!!!!!!! ● ●● ● ● ●● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲▲▲▲▲▲▲▲ ● ● ● ●● ● ● ● G!!!!!!!! ● ● ● ●● ● ● ● TO-3P !!!!!!!! FQA Series GS D S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQA13N50C Units V Drain-Source Voltage 500 V DSS I - Continuous (T = 25°C) Drain Current 13.5 A D C - Continuous (T = 100°C) 8.5 A C I (Note 1) Drain Current - Pulsed 54 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 860 mJ AS I Avalanche Current (Note 1) 13.5 A AR E (Note 1) Repetitive Avalanche Energy 21.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 218 W D C - Derate above 25°C 1.56 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 0.58 °C/W θJC R Thermal Resistance, Case-to-Sink Typ. 0.24 -- °C/W θJS R Thermal Resistance, Junction-to-Ambient -- 40 °C/W θJA ©2004 Rev. A, October 2004
