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FPNH10
NPN RF Transistor
FPNH10 FPNH10 C TO-92 B E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 μA to 20 mA range in common drift, high output UHF oscillators. Sourced from Process 42. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 25 V CEO V Collector-Base Voltage 30 V CBO V Emitter-Base Voltage 3.0 V EBO I Collector Current - Continuous 50 mA C Operating and Storage Junction Temperature Range -55 to +150 °C T , T J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units FPNH10 P Total Device Dissipation 350 mW D Derate above 25°C 2.8 mW/°C Thermal Resistance, Junction to Case 125 R °C/W θJC R Thermal Resistance, Junction to Ambient 357 °C/W θJA *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 2000 FPNH10 Rev. A emitter or common base mode of operations, and in low frequency
