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Partno Mfg Dc Qty AvailableDescript
FN1A3Q-T1B |FN1A3QT1BNECN/a11830avaiCompound transistor
FN1A3Q-T2B |FN1A3QT2BNECN/a2550avaiCompound transistor


FN1A3Q-T1B ,Compound transistorDATA SH E ET SILICON TRANSISTOR FN1A30. ttatc ELECTRON DEVICE, MEDIUM SPEED SWITCHIN ..
FN1A3Q-T2B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 °c) CHARACTiiRISTlC SYMBOL TEST CONDITIONS Collecto ..
FN1A4M ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 "ty CHARACTERISTIC SYMBOL . . . TEST CONDITIONS Collector ..
FN1A4M-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 "ty CHARACTERISTIC SYMBOL . . . TEST CONDITIONS Collector ..
FN1A4M-T2B ,Compound transistorFEATURES PACKAGE DIMENSIONS ir,' o Resistors Built-in TYPE in millimeters _ C 2.8k0.2 B l, _ . ..
FN1A4P ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 °C) N CHARACTERISTIC SYMBOL . _ . . TEST CONDITIONS Colle ..
G2SB60 ,BRIDGE RECTIFIERSFeaturesChamfer• Plastic package has Underwriters LaboratoryFlammability Classification 94V-00.421 ..
G2SBA60 ,Glass Passivated Single-Phase, Forward Current 1.5 A, Reverse Voltage 200 thru 800 VFeatures• Plastic package has Underwriters Laboratory0.421 (10.7)Flammability Classification 94V-00 ..
G2SBA80 ,Glass Passivated Single-Phase, Forward Current 1.5 A, Reverse Voltage 200 thru 800 V21-Mar-02 1G2SBA20 thru G2SBA80Vishay Semiconductorsformerly General SemiconductorRatings and Chara ..
G2SBA80 ,Glass Passivated Single-Phase, Forward Current 1.5 A, Reverse Voltage 200 thru 800 VThermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.Parameter Sy ..
G3D ,GLASS PASSIVATED JUNCTION RECTIFIER Document Number 860862 Rev. 2, 28-Jan-03G3A to G3MVISHAYVishay SemiconductorsTypical Characteristi ..
G3K ,GLASS PASSIVATED JUNCTION RECTIFIER Document Number 860864 Rev. 2, 28-Jan-03G3A to G3MVISHAYVishay SemiconductorsOzone Depleting Subst ..


FN1A3Q-T1B-FN1A3Q-T2B

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