FMBSA56 ,PNP General Purpose Amplifierapplications at Ecollector currents to 300 mA. • Sourced from Process 73.BCCpin #1TMSuperSOT -6 sin ..
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FMBSA56
PNP General Purpose Amplifier
FMBSA56 FMBSA56 NC PNP General Purpose Amplifier C1 • This device is designed for general purpose amplifier applications at E collector currents to 300 mA. • Sourced from Process 73. B C C pin #1 TM SuperSOT -6 single Mark: .2G1 Absolute Maximum Ratings* T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Emitter Voltage -80 V CEO V Collector-Base Voltage -80 V CBO V Emitter-Base Voltage -4.0 V EBO I Collector Current - Continuous -500 mA C T , T Operating and Storage Junction Temperature Range - 55 ~ 150 °C J STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units Off Characteristics V Collector-Emitter Sustaining Voltage * I = -1.0mA, I = 0 -80 V (BR)CEO C B V Collector-Base Breakdown Voltage I = -100μA, I = 0 -80 (BR)CBO C E V Emitter-Base Breakdown Voltage I = -100μA, I = 0 -4.0 V (BR)EBO E C I Collector Cut-off Current V = -60V, I = 0 -0.1 μA CEO CE B I Collector Cut-off Current V = -80V, I = 0 -0.1 μA CBO CB E On Characteristics h DC Current Gain I = -10mA, V = -1.0V 100 FE C CE I = -100mA, V = -1.0V 100 C CE V Collector-Emitter Saturation Voltage I = -100mA, I = -10mA -0.25 V CE(sat) C B V Base-Emitter On Voltage I = -100mA, V = -1.0V -1.2 V BE(on) C CE Small Signal Characteristics f Current Gain Bandwidth Product I = -10mA, V = -2.0V, 50 MHz T C CE f = 100MHz * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% Thermal Characteristics T =25°C unless otherwise noted a Symbol Parameter Max. Units P Total Device Dissipation * 700 mW D R Thermal Resistance, Junction to Ambient, total 180 °C/W θJA * Device mounted on a 1 in 2 pad of 2 oz copper. ©2004 Rev. A1, November 2004
