FMBM5551 ,NPN General Purpose AmplifierElectrical Characteristics T = 25°C unless otherwise notedCSymbol Parameter Conditions Min. Max Un ..
FMBM5551 ,NPN General Purpose AmplifierFeatures• This device has matched dies• Sourced from process 16.• See MMBT5551 for characteristicsC ..
FMBM5551 ,NPN General Purpose AmplifierFMBM5551 NPN General Purpose Amplifier SuperSOT-6 Surface Mount PackageJanuary 2005FMBM5551 NPN Ge ..
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FMBM5551
NPN General Purpose Amplifier
FMBM5551 NPN General Purpose Amplifier SuperSOT-6 Surface Mount Package January 2005 FMBM5551 NPN General Purpose Amplifier SuperSOT-6 Surface Mount Package Features • This device has matched dies • Sourced from process 16. • See MMBT5551 for characteristics C2 E1 C1 B2 E2 B1 pin #1 TM SuperSOT -6 Mark: .3S2 Dot denotes pin #1 Absolute Maximum Ratings * Symbol Parameter Value Units V Collector-Emitter Voltage 160 V CEO V Collector-Base Voltage 180 V CBO V Emitter-Base Voltage 6 V EBO I Collector Current (DC) 600 mA C P Collector Dissipation (T = 25°C) 0.7 W C C T Junction Temperature 150 °C J T Storage Temperature Range -55 ~ 150 °C STG T Thermal Resistance, Junction to Ambient 180 °C/W θJA * Pd total, for both transistors. For each transistor, Pd = 350mW Electrical Characteristics T = 25°C unless otherwise noted C Symbol Parameter Conditions Min. Max Units Off Characteristics BV Collector-Emitter Voltage I = 1mA, I = 0 160 V CEO C B BV Collector-Base Voltage I = 100μA, I = 0 180 V CBO C E BV Emitter-Base Voltage I = 10μA, I = 0 6 V EBO C C I Collector Cut-off Current V = 120V 50 nA CBO CB V = 120V, T = 100°C 50 μA CB a I Emitter Cut-off Current V = 10V 50 nA EBO EB On Characteristics h DC Current Gain V = 5V, I = 1mA 80 FE1 CE C DIVID1 Variation Ratio of h Between Die 1 and Die 2 h (Die1)/h (Die2) 0.9 1.1 FE1 FE1 FE1 h DC Current Gain V = 5V, I = 10mA 80 250 FE2 CE C DIVID2 Variation Ratio of h Between Die 1 and Die 2 h (Die1)/h (Die2) 0.95 1.05 FE2 FE2 FE2 ©2005 1 FMBM5551 Rev. C
