FM2G150US60 ,IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condit ..
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FM2G150US60
IGBT
FM2G150US60 IGBT FM2G150US60 Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. Features • UL Certified No. E209204 • Short circuit rated 10us @ T = 100°C, V = 15V C GE • High speed switching Package Code : 7PM-BB • Low saturation voltage : V = 2.2 V @ I = 150A CE(sat) C • High input impedance • Fast and soft anti-parallel FWD E1/C2 Application C1 E2 • AC & DC motor controls • General purpose inverters • Robotics • Servo controls G1 E1 G2 E2 •UPS Internal Circuit Diagram Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Description FM2G150US60 Units V Collector-Emitter Voltage 600 V CES V Gate-Emitter Voltage ± 20 V GES I Collector Current @ T = 25°C 150 A C C I Pulsed Collector Current 300 A CM (1) I Diode Continuous Forward Current @ T = 100°C 150 A F C I Diode Maximum Forward Current 300 A FM T Short Circuit Withstand Time @ T = 100°C10 us SC C P Maximum Power Dissipation @ T = 25°C 625 W D C T Operating Junction Temperature -40 to +150 °C J T Storage Temperature Range -40 to +125 °C stg V Isolation Voltage @ AC 1minute 2500 V iso Power Terminals Screw: M5 2.0 N.m Mounting Torque Mounting Screw: M6 2.5 N.m Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature ©2002 FM2G150US60 Rev. A1
