FJX4013RTF ,PNP Epitaxial Silicon TransistorFJX4013RFJX4013RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FJX4014RTF ,PNP Epitaxial Silicon TransistorFJX4014RFJX4014RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FJX597JBTF ,Silicon N-Channel Junction FETApplications3• Especially Suited for use in Audio, Telephone Capacitor Microphones• Excellent Volt ..
FJX597JCTF ,Silicon N-Channel Junction FETApplications3• Especially Suited for use in Audio, Telephone Capacitor Microphones• Excellent Volt ..
FJX597JHTF ,Silicon N-Channel Junction FETFJX597JHFJX597JHCapacitor Microphone
FJX597J-HTF ,Silicon N-Channel Junction FETApplications3• Especially Suited for use in Audio, Telephone Capacitor Microphones• Excellent Volt ..
FST34170 ,17-Bit to 34-Bit Multiplexer/Demultiplexer Bus SwitchApplications Note AN-5008 for detailsboth.Two select (SEL , SEL ) inputs provide switch enable con- ..
FST34170 ,17-Bit to 34-Bit Multiplexer/Demultiplexer Bus SwitchElectrical CharacteristicsT = −40 °C to +85 °CASymbol Parameter V Min Typ Max Units ConditionsCC(V) ..
FST34170MTD ,17-Bit to 34-Bit Multiplexer/Demultiplexer Bus SwitchFeaturesThe Fairchild Switch FST34170 is a 17-bit to 34-bit high- Slower Output Enable times preve ..
FST34170MTDX ,17-Bit to 34-Bit Multiplexer/Demultiplexer Bus SwitchApplications Note AN-5008 for detailsboth.Two select (SEL , SEL ) inputs provide switch enable con- ..
FST34X2245 ,32-Bit Bus Switch with 25-Ohm Series Resistors in OutputsFeaturesThe Fairchild Switch FST34X2245 provides 32-bits of high
FJX4013RTF
PNP Epitaxial Silicon Transistor
FJX4013R FJX4013R Switching Application (Bias Resistor Built In) 3 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R =2.2KΩ, R =47KΩ) 1 2 • Complement to FJX3013R 2 1 SOT-323 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R1 B S63 R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage -50 V CBO V Collector-Emitter Voltage -50 V CEO V Emitter-Base Voltage -10 V EBO I Collector Current -100 mA C P Collector Power Dissipation 200 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = -10μA, I =0 -50 V CBO C E BV Collector-Emitter Breakdown Voltage I = -100μA, I =0 -50 V CEO C B I Collector Cutoff Current V = -40V, I =0 -0.1 μA CBO CB E h DC Current Gain V = -5V, I = -5mA 68 FE CE C V (sat) Collector-Emitter Saturation Voltage I = -10mA, I = -0.5mA -0.3 V CE C B f Current Gain Bandwidth Product V = -10V, I =-5mA 200 MHz T CE C C Output Capacitance V = -10V, I =0 5.5 pF ob CB E f=1.0MHz V (off) Input Off Voltage V = -5V, I = -100μA-0.5 V I CE C V (on) Input On Voltage V = -0.2V, I = -10mA -1.1 V I CE C R Input Resistor 1.5 2.2 2.9 KΩ 1 R /R Resistor Ratio 0.042 0.047 0.052 1 2 ©2002 Rev. A4, August 2002
