FJX3001RTF ,NPN Epitaxial Silicon TransistorFJX3001RFJX3001RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FJX3002RTF ,NPN Epitaxial Silicon TransistorFJX3002RFJX3002RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FJX3003RTF ,NPN Epitaxial Silicon TransistorFJX3003RFJX3003RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FJX3004RTF ,NPN Epitaxial Silicon TransistorFJX3004RFJX3004R3Switching Application (Bias Resistor Built In)• Switching circuit, Inverter, Inter ..
FJX3005RTF ,NPN Epitaxial Silicon TransistorFJX3005RFJX3005RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FJX3006RTF ,NPN Epitaxial Silicon TransistorFJX3006RFJX3006RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FST3384MTC ,10-Bit Low Power Bus SwitchFST3384 10-Bit Low Power Bus SwitchSeptember 1997Revised November 2000FST338410-Bit Low Power Bus S ..
FST3384MTC ,10-Bit Low Power Bus SwitchElectrical CharacteristicsT = −40°C to +85°CAVCCSymbol Parameter Units ConditionTyp(V)Min Max(Note ..
FST3384MTCX ,10-Bit Low Power Bus SwitchFeaturesThe Fairchild Switch FST3384 provides 10 bits of high-
FJX3001RTF
NPN Epitaxial Silicon Transistor
FJX3001R FJX3001R Switching Application (Bias Resistor Built In) 3 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=4.7KΩ) • Complement to FJX4001R 2 1 SOT-323 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R1 S01 B R2 NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 50 V CBO V Collector-Emitter Voltage 50 V CEO V Emitter-Base Voltage 10 V EBO I Collector Current 100 mA C P Collector Power Dissipation 200 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =10μA, I =0 50 V CBO C E BV Collector-Emitter Breakdown Voltage I =100μA, I =0 50 V CEO C B I Collector Cut-off Current V =40V, I =0 0.1 μA CBO CB E h DC Current Gain V =5V, I =10mA 20 FE CE C V (sat) Collector-Emitter Saturation Voltage I =10mA, I =0.5mA 0.3 V CE C B f Current Gain Bandwidth Product V =10V, I =5mA 250 MHz T CE C C Output Capacitance V =10V, I =0 3.7 pF ob CB E f=1.0MHz V (off) Input Off Voltage V =5V, I =100μΑ 0.5 V I CE C V (on) Input On Voltage V =0.3V, I =20mA 3 V I CE C R Input Resistor 3.2 4.7 6.2 KΩ 1 R /R Resistor Ratio 0.9 1 1.1 1 2 ©2002 Rev. A2, August 2002
