FJV992EMTF ,PNP Epitaxial Silicon TransistorFJV992FJV992Audio Frequency Low Noise Amplifier• Complement to FJV184532SOT-2311. Base 2. Emitter ..
FJV992FMTF ,PNP Epitaxial Silicon TransistorFJV992FJV992Audio Frequency Low Noise Amplifier• Complement to FJV184532SOT-2311. Base 2. Emitter ..
FJX1182OTF ,PNP Epitaxial Silicon TransistorFJX1182FJX1182Low Frequency Power Amplifier321SOT-3231. Base 2. Emitter 3. CollectorPNP Epitaxi ..
FJX1182YTF ,PNP Epitaxial Silicon TransistorFJX1182FJX1182Low Frequency Power Amplifier321SOT-3231. Base 2. Emitter 3. CollectorPNP Epitaxi ..
FJX1182YTF ,PNP Epitaxial Silicon TransistorFJX1182FJX1182Low Frequency Power Amplifier321SOT-3231. Base 2. Emitter 3. CollectorPNP Epitaxi ..
FJX2222ATF ,NPN Epitaxial Silicon TransistorFJX2222AFJX2222A3General Purpose Transistor• Collector-Emitter Voltage: V = 40VCEO • Collector Diss ..
FST3384MTC ,10-Bit Low Power Bus SwitchFST3384 10-Bit Low Power Bus SwitchSeptember 1997Revised November 2000FST338410-Bit Low Power Bus S ..
FST3384MTC ,10-Bit Low Power Bus SwitchElectrical CharacteristicsT = −40°C to +85°CAVCCSymbol Parameter Units ConditionTyp(V)Min Max(Note ..
FST3384MTCX ,10-Bit Low Power Bus SwitchFeaturesThe Fairchild Switch FST3384 provides 10 bits of high-
FJV992EMTF-FJV992FMTF
PNP Epitaxial Silicon Transistor
FJV992 FJV992 Audio Frequency Low Noise Amplifier • Complement to FJV1845 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage -120 V CBO V Collector-Emitter Voltage -120 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -50 mA C P Collector Power Dissipation 300 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Base Breakdown Voltage I = -100μA, I = 0 -120 V CBO C E BV Collector-Emitter Breakdown Voltage I = -1mA, I =0 -120 V CEO C B BV Emitter-Emitter Breakdown Voltage I = -10μA, I =0 -5 V EBO E C I Emitter-Base Cutoff Current V = -6V, I =0 -30 nA EBO EB C h DC Current Gain V = -6V, I = -0.1mA 150 FE1 CE C h V = -6V, I = -1mA 200 800 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I = -10mA, I = -1mA -300 mV CE C B V (on) Base-Emitter On Voltage V = -6V, I = -1mA -0.55 -0.65 V BE CE C f Current Gain Bandwidth Product V = -6V, I = -1mA 50 MHz T CE C C Output Capacitance V = -30V, I =0, f=1MHz 3 pF ob CB E NV Noise Voltage V = -5.0V, I = -1.0mA, 40 mV CE C R =100KW, G = 80dB, G V f = 10Hz to 1.0KHz h Classification FE2 Classification P F E h 200 ~ 400 300 ~ 600 400 ~ 800 FE2 Marking 2JP h Classification FE ©2004 Rev. C, August 2004
