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FJV4109RMTF Fast Delivery,Good Price
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FJV4109RMTFFAIRCHILDN/a3000avaiPNP Epitaxial Silicon Transistor


FJV4109RMTF ,PNP Epitaxial Silicon TransistorFJV4109RFJV4109RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
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FST3383WMX ,10-Bit Low Power Bus-Exchange SwitchFeaturesThe FST3383 provides two sets of high-speed CMOS TTL-

FJV4109RMTF
PNP Epitaxial Silicon Transistor
FJV4109R FJV4109R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit 3 • Built in bias Resistor (R=4.7KΩ) • Complement to FJV3109R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R79 R B PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -40 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -100 mA C P Collector Power Dissipation 200 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = -100μA, I =0 -40 V CBO C E BV Collector-Emitter Breakdown Voltage I = -1mA, I =0 -40 V CEO C B I Collector Cut-off Current V = -30V, I =0 -0.1 μA CBO CB E h DC Current Gain V = -5V, I = -1mA 100 600 FE CE C V (sat) Collector-Emitter Saturation Voltage I = -10mA, I = -1mA -0.3 V CE C B C Output Capacitance V = -10V, I =0 5.5 pF ob CB E f=1MHz f Current Gain Bandwidth Product V = -10V, I = -5mA 200 MHz T CE C R Input Resistor 3.2 4.7 6.2 KΩ ©2002 Rev. A, August 2002
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