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FJV1845EMTF-FJV1845PMTF-FJV1845UMTF Fast Delivery,Good Price
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FJV1845EMTFFAIRCHILN/a27000avaiNPN Epitaxial Silicon Transistor
FJV1845PMTFFAIRCHILN/a6000avaiNPN Epitaxial Silicon Transistor
FJV1845PMTFFAIRCHILDN/a72000avaiNPN Epitaxial Silicon Transistor
FJV1845UMTFFAIRCHILN/a30000avaiNPN Epitaxial Silicon Transistor


FJV1845PMTF ,NPN Epitaxial Silicon TransistorFJV1845FJV1845Amplifier Transistor• Complement to FJV992 32SOT-2311. Base 2. Emitter 3. Collector ..
FJV1845PMTF ,NPN Epitaxial Silicon TransistorFJV1845FJV1845Amplifier Transistor• Complement to FJV992 32SOT-2311. Base 2. Emitter 3. Collector ..
FJV1845UMTF ,NPN Epitaxial Silicon TransistorFJV1845FJV1845Amplifier Transistor• Complement to FJV992 32SOT-2311. Base 2. Emitter 3. Collector ..
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FJV1845EMTF-FJV1845PMTF-FJV1845UMTF
NPN Epitaxial Silicon Transistor
FJV1845 FJV1845 Amplifier Transistor • Complement to FJV992 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 120 V CBO V Collector-Emitter Voltage 120 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 50 mA C I Base Current 10 mA B P Collector Dissipation 300 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V =120V, I =0 50 nA CBO CB E I Emitter Cut-off Current V =5V, I =0 50 nA EBO EB C h DC Current Gain V =6V, I =0.1mA 150 580 FE1 CE C h V =6V, I =1mA 200 600 1200 FE2 CE C V (on) Base-Emitter On Voltage V =6V, I=1mA 0.550.590.65 V BE CE C V (sat) Collector-Emitter Saturation Voltage I =10mA, I =1mA 0.07 0.3 V CE C B f Current Gain Bandwidth Product V =6V, I =1mA 50 110 MHz T CE C C Output Capacitance V =30V, I =0, f=1MHz 1.6 2.5 pF ob CB E h Classification FE2 Classification P F E U h 200 ~ 400 300 ~ 600 400 ~ 800 600 ~ 1200 FE2 Marking 6E h Classification FE ©2002 Rev. B1, August 2002
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