FJPF5021OTU ,NPN Silicon TransistorFJPF5021FJPF5021High Voltage and High Reliability High Speed Switching : t = 0.1µ s(Typ.)FWide S ..
FJPF6806D ,NPN Triple Diffused Planar Silicon TransistorFJPF6806DFJPF6806DHigh Voltage Color Display Horizontal Deflection Output (Damper Diode Built In) ..
FJT1100 ,Ultra Low Leakage Diodes' - . FAIRCHILD SEMICONDUCTOR an yirt_,1yani:rv unanua 7 (r
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FJT44 ,NPN Epitaxial Silicon TransistorFJT44FJT44High Voltage Transistor1SOT-2231.Base 2.Collector 3.EmitterNPN Epitaxial Silicon Tr ..
FJT44KTF ,NPN Epitaxial Silicon TransistorFJT44FJT44High Voltage Transistor1SOT-2231.Base 2.Collector 3.EmitterNPN Epitaxial Silicon Tr ..
FJT44TF ,NPN Epitaxial Silicon TransistorFJT44FJT44High Voltage Transistor1SOT-2231.Base 2.Collector 3.EmitterNPN Epitaxial Silicon Tr ..
FST3257MX_NL ,Quad 2:1 Multiplexer/Demultiplexer Bus SwitchFST3257 Quad 2:1 Multiplexer/Demultiplexer Bus SwitchSeptember 1997Revised December 1999FST3257Quad ..
FST3257QSCX ,Quad 2:1 Multiplexer/Demultiplexer Bus SwitchFST3257 Quad 2:1 Multiplexer/Demultiplexer Bus SwitchSeptember 1997Revised December 1999FST3257Quad ..
FST32X245 ,16-Bit Bus SwitchElectrical CharacteristicsT = −40 °C to +85 °CAVCCSymbol Parameter Units ConditionsMin Typ Max(V)(N ..
FST32X245 ,16-Bit Bus SwitchFeaturesThe Fairchild Switch FST32X245 provides 16-bits of high
FJPF5021OTU
NPN Silicon Transistor
FJPF5021 FJPF5021 High Voltage and High Reliability High Speed Switching : t = 0.1μs(Typ.) F Wide SOA TO-220F 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 800 V CBO V Collector-Emitter Voltage 500 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current (DC) 5 A C I Collector Current (Pulse) 10 A CP I Base Current 2 A B P Collector Dissipation (T =25°C) 40 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = 1mA, I = 0 800 V CBO C E BV Collector-Emitter Sustaining Voltage I = 5mA, I = 0 500 V CEO C B BV Emitter-Base Breakdown Voltage I = 1mA, I = 0 7 V EBO E C V (sus) Collector-Emitter Sustaining Voltage I = 2.5A, I = -I = 1A 500 V CEX C B1 B2 L = 1mH, Clamped I Collector Cut-off Current V = 500V, I = 0 10 μA CBO CB E I Emitter Cut-off Current V = 5V, I = 0 10 μA EBO EB C h DC Current Gain V = 5V, I = 0.6A 15 50 FE1 CE C h V = 5V, I = 3A 8 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I = 3A, I = 0.6A 1 V CE C B V (sat) Base-Emitter Saturation Voltage I = 3A, I = 0.6A 1.5 V BE C B C Output Capacitance V = 10V, I = 0, f = 1MHz 80 pF ob CB E f Current Gain Bandwidth Product V = 10V, I = 0.6A 15 MHz T CE C t Turn On Time V = 200V 0.5 μs ON CC I = 5I = -2.5I = 4A t Storage Time C B1 B2 3 μs STG R = 50Ω L t Fall Time 0.1 0.3 μs F h Classification FE Classification R O Y h 15 ~ 30 20 ~ 40 30 ~ 50 FE1 ©2003 Rev. A, May 2003
