FJP5321TU ,NPN Triple Diffused Planar Silicon TransistorFJP5321FJP5321High Voltage and High Reliability• High speed Switching• Wide Safe Operating AreaTO-2 ..
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FJPF13009TU ,NPN Silicon TransistorFJPF13009FJPF13009High Voltage Switch Mode Application High Speed Switching Suitable for Switchin ..
FJPF3305TU ,NPN Silicon TransistorFJPF3305FJPF3305High Voltage Switch Mode Application• High Speed Switching• Suitable for Electronic ..
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FST3257M ,Quad 2:1 Multiplexer/Demultiplexer Bus SwitchElectrical CharacteristicsT = −40 °C to +85 °CAVCCSymbol Parameter Units ConditionsTyp(V)Min Max(No ..
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FST3257MX ,Quad 2:1 Multiplexer/Demultiplexer Bus SwitchFeaturesThe Fairchild Switch FST3257 is a quad 2:1 high-speed
FJP5321TU
NPN Triple Diffused Planar Silicon Transistor
FJP5321 FJP5321 High Voltage and High Reliability • High speed Switching • Wide Safe Operating Area TO-220 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 800 V CBO V Collector-Emitter Voltage 500 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current (DC) 5 A C I *Collector Current (Pulse) 10 A CP I Base Current (DC) 2 A B I *Base Current (Pulse) 4 A BP P Power Dissipation(T =25°C) 100 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG * Pulse Test: Pulse Width = 5ms, Duty Cycle≤10% Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = 1mA, I = 0 800 - - V CBO C E BV Collector-Emitter Breakdown Voltage I = 5mA, I = 0 500 - - V CEO C B BV Emitter-Base Breakdown Voltage I =1mA, I = 0 7 - - V EBO C C I Collector Cut-off Current V = 800V, I = 0 - - 100 μA CBO CB E I Emitter Cut-off Current V = 7V, I = 0 - - 10 μA EBO EB C h DC Current Gain V = 5V, I = 0.6A 15 - 40 FE1 CE C h V = 5V, I = 3A 8 - - FE2 CE C V (sat) Collector-Emitter Saturation Voltage I = 3A, I = 0.6A - - 1.0 V CE C B V (sat) Base-Emitter Saturation Voltage I = 3A, I = 0.6A - - 1.5 V BE C B f Current Gain bandwidth Product V = 10V, I = 0.6A - 14 - MHz T CE C C Output Capacitance V = 10V, I = 0, f = 1MHz - 65 100 pF ob CB E C Input Capacitance V = 7V, I = 0, f = 1MHz - 1400 2000 pF ib EB C t Turn On Time V = 125V, I = 1A -- 0.5 μs ON CC C I = -I = 0.2A t B1 B2 Storage Time - 6.5 μs STG R = 125Ω L t Fall Time - - 0.3 μs F t Turn On Time V = 250V, I = 4A -- 0.5 μs ON CC C I = 0.8A, I = -1.6A B1 B2 t Storage Time - - 3.0 μs STG R = 62.5Ω L t Fall Time - - 0.3 μs F ©2003 Rev. A, December 2003
