FJP5027 ,NPN Silicon TransistorFJP5027FJP5027High Voltage and High Reliability• High Speed Switching•Wide SOATO-22011.Base 2.Co ..
FJP5027RTU , Wide SOA
FJP5027RTU , Wide SOA
FJP5321TU ,NPN Triple Diffused Planar Silicon TransistorFJP5321FJP5321High Voltage and High Reliability• High speed Switching• Wide Safe Operating AreaTO-2 ..
FJP5321TU ,NPN Triple Diffused Planar Silicon TransistorFJP5321FJP5321High Voltage and High Reliability• High speed Switching• Wide Safe Operating AreaTO-2 ..
FJPF13007TU ,NPN Silicon TransistorFJPF13007FJPF13007High Voltage Switch Mode Application• High Speed Switching• Suitable for Switchin ..
FST3257M ,Quad 2:1 Multiplexer/Demultiplexer Bus SwitchElectrical CharacteristicsT = −40 °C to +85 °CAVCCSymbol Parameter Units ConditionsTyp(V)Min Max(No ..
FST3257MTC ,Quad 2:1 Multiplexer/Demultiplexer Bus SwitchFST3257 Quad 2:1 Multiplexer/Demultiplexer Bus SwitchSeptember 1997Revised December 1999FST3257Quad ..
FST3257MTCX ,Quad 2:1 Multiplexer/Demultiplexer Bus SwitchFST3257 Quad 2:1 Multiplexer/Demultiplexer Bus SwitchSeptember 1997Revised December 1999FST3257Quad ..
FST3257MX ,Quad 2:1 Multiplexer/Demultiplexer Bus SwitchFeaturesThe Fairchild Switch FST3257 is a quad 2:1 high-speed
FJP5027
NPN Silicon Transistor
FJP5027 FJP5027 High Voltage and High Reliability • High Speed Switching •Wide SOA TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 1100 V CBO V Collector-Emitter Voltage 800 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current (DC) 3 A C I Collector Current (Pulse) 10 A CP I Base Current 1.5 A B P Collector Dissipation ( T =25°C) 50 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = 1mA, I = 0 1100 V CBO C E BV Collector-Emitter Breakdown Voltage I = 5mA, I = 0 800 V CEO C B BV Emitter-Base Breakdown Voltage I = 1mA, I = 0 7 V EBO E C V (sus) Collector-Emitter Sustaining Voltage I = 1.5A, I = -I = 0.3A 800 V CEX C B1 B2 L = 2mH, Clamped I Collector Cut-off Current V = 800V, I = 0 10 μA CBO CB E I Emitter Cut-off Current V = 5V, I = 0 10 μA EBO EB C h DC Current Gain V = 5V, I = 0.2A 10 40 FE1 CE C h V = 5V, I = 1A 8 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I = 1.5A, I = 0.3A 2 V CE C B V (sat) Base-Emitter Saturation Voltage I = 1.5A, I = 0.3A 1.5 V BE C B C Output Capacitance V = 10V, I = 0, f = 1MHz 60 pF ob CB E f Current Gain Bandwidth Product V = 10V, I = 0.2A 15 MHz T CE C t Turn On Time V = 400V 0.5 μs ON CC I = 5I = -2.5I = 2A C B1 B2 t Storage Time 3 μs STG R = 200Ω L t Fall Time 0.3 μs F h Classification FE Classification N R O h 10 ~ 20 15 ~ 30 20 ~ 40 FE1 ©2003 Rev. A, December 2003
