FJN3306R ,NPN Epitaxial Silicon TransistorFJN3306RFJN3306RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJN3307R ,NPN Epitaxial Silicon TransistorFJN3307RFJN3307RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJN3307R ,NPN Epitaxial Silicon TransistorFJN3307RFJN3307RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJN3308R ,NPN Epitaxial Silicon TransistorFJN3308RFJN3308RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJN3308R ,NPN Epitaxial Silicon TransistorFJN3308RFJN3308RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJN3311R ,NPN Epitaxial Silicon TransistorFJN3311RFJN3311RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FST3244MTC ,8-Bit Bus SwitchFeaturesThe Fairchild Switch FST3244 provides 8-bits of high- 4
FJN3306R
NPN Epitaxial Silicon Transistor
FJN3306R FJN3306R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R =10KΩ, R =47KΩ) 1 2 • Complement to FJN4306R TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Equivalent Circuit Symbol Parameter Value Units C V Collector-Base Voltage 50 V CBO V Collector-Emitter Voltage 50 V CEO R1 V Emitter-Base Voltage 10 V B EBO I Collector Current 100 mA C R2 P Collector Power Dissipation 300 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG E Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =10μA, I =0 50 V CBO C E BV Collector-Emitter Breakdown Voltage I =100μA, I =0 50 V CEO C B I Collector Cut-off Current V =40V, I =0 0.1 μA CBO CB E h DC Current Gain V =5V, I =5mA 68 FE CE C V (sat) Collector-Emitter Saturation Voltage I =10mA, I =0.5mA 0.3 V CE C B C Output Capacitance V =10mA, I =0 3.7 pF ob CE E f=1.0MHz f Current Gain Bandwidth Product V =10V, I =5mA 250 MHz T CB C V (off) Input Off Voltage V =5V, I =100μA0.3 V I CE C V (on) Input On Voltage V =0.3V, I =1mA 1.4 V I CE C R Input Resistor 7 10 13 KΩ 1 R /R Resistor Ratio 0.19 0.21 0.24 1 2 ©2002 Rev. A, July 2002
