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FJE3303H1FAILCHILN/a1203avaiNPN Silicon Transistor Planar Silicon Transistor
FJE3303H2TO-126N/a20avaiNPN Silicon Transistor Planar Silicon Transistor


FJE3303H1 ,NPN Silicon Transistor Planar Silicon TransistorFJE3303FJE3303High Voltage Switch Mode
FJE3303H2 ,NPN Silicon Transistor Planar Silicon TransistorApplications• High Speed Switching• Suitable for Electronic Ballast and Switching RegulatorTO-12611 ..
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FJE3303H1-FJE3303H2
NPN Silicon Transistor Planar Silicon Transistor
FJE3303 FJE3303 High Voltage Switch Mode Applications • High Speed Switching • Suitable for Electronic Ballast and Switching Regulator TO-126 1 1. Emitter 2.Collector 3.Base NPN Silicon Transistor Planar Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 700 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 9 V EBO I Collector Current (DC) 1.5 A C I *Collector Current (Pulse) 3 A CP I Base Current (DC) 0.75 A B I *Base Current (Pulse) 1.5 A BP P Collector Power Dissipation(T =25°C) 20 W C a T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG * Pulse Test: Pulse Width=5ms, Duty Cycle < 10% Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =500μA, I =0 700 V CBO C E BV Collector-Emitter Breakdown Voltage I =5mA, I =0 400 V CEO C B BV Emitter-Base Breakdown Voltage I =500μA, I=0 9 V EBO E C I Collector Cut-off Current V =700V, I=0 10 μA CBO CB E I Emitter Cut-off Current V =9V, I=0 10 μA EBO EB C h *DC Current Gain V =2V, I =0.5A 8 21 FE1 CE C h FE2 V =2V, I =1.0A 5 CE C V (sat) Collector-Emitter Saturation Voltage I =0.5A, I=0.1A 0.5V CE C B I =1.0A, I=0.25A 1.0V C B I =1.5A, I=0.5A 3.0V C B V (sat) Base-Emitter Saturation Voltage I =0.5A, I=0.1A 1.0V BE C B I =1.0A, I=0.25A 1.2V C B f Current Gain Bandwidth Product V =10V, I =0.1A 4 MHz T CE C t Turn ON Time V =125V, I =1A, 1.1 μs ON CC C I =0.2A, I =-0.2A, t Storage Time B1 B2 4.0 μs STG R = 125Ω L t Fall Time 0.7 μs F * Pulse test: PW≤300μs, Duty Cycle≤2% h Classification FE Classification R O h 8 ~ 16 14 ~ 21 FE1 ©2004 Rev. A, March 2004
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