FJAF6806D ,High Voltage Color Display Horizontal Deflection Output (Damper Diode Built In)FJAF6806DFJAF6806DHigh Voltage Color Display Horizontal Deflection Output (Damper Diode Built In) ..
FJAF6810A ,High Voltage Color Display Horizontal Deflection OutputFJAF6810AFJAF6810AHigh Voltage Color Display Horizontal Deflection Output • High Collector-Base B ..
FJAF6810A ,High Voltage Color Display Horizontal Deflection OutputFJAF6810AFJAF6810AHigh Voltage Color Display Horizontal Deflection Output • High Collector-Base B ..
FJAF6810D ,High Voltage Color Display Horizontal Deflection Output (Damper Diode Built-In)FJAF6810DFJAF6810DHigh Voltage Color Display Horizontal Deflection Output (Damper Diode Built-In) ..
FJAF6815 ,High Voltage Color Display Horizontal Deflection OutputFJAF6815FJAF6815High Voltage Color Display Horizontal Deflection Output • High Collector-Base Bre ..
FJAF6815TU ,NPN Triple Diffused Planar Silicon TransistorFJAF6815FJAF6815High Voltage Color Display Horizontal Deflection Output • High Collector-Base Bre ..
FST16292MEA ,12-Bit to 24-Bit Multiplexer/Demultiplexer Bus SwitchElectrical CharacteristicsT = −40 °C to +85 °CAVCCSymbol Parameter Units ConditionsMin Typ Max(V)(N ..
FST16292MEAX ,12-Bit to 24-Bit Multiplexer/Demultiplexer Bus SwitchFST16292 12-Bit to 24-Bit Multiplexer/Demultiplexer Bus SwitchJuly 1997Revised November 2000FST1629 ..
FST16292MTD ,12-Bit to 24-Bit Multiplexer/Demultiplexer Bus SwitchFeaturesThe Fairchild Switch FST16292 provides twelve 2:1 high-
FJAF6806D
High Voltage Color Display Horizontal Deflection Output (Damper Diode Built In)
FJAF6806D FJAF6806D High Voltage Color Display Horizontal Deflection Output (Damper Diode Built In) • High Collector-Base Breakdown Voltage : BV = 1500V CBO • High Switching Speed : t (typ.) =0.1μs F • For Color TV TO-3PF 1 1.Base 2.Collector 3.Emitter Equivalent Circuit C B NPN Triple Diffused Planar Silicon Transistor 50Ω typ. E Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Rating Units V Collector-Base Voltage 1500 V CBO V Collector-Emitter Voltage 750 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current (DC) 6 A C I * Collector Current (Pulse) 12 A CP P Collector Dissipation 50 W C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG * Pulse Test: Pulse Width=5ms, Duty Cycle < 10% Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Conditions Min Typ Max Units I Collector Cut-off Current V =1400V, R =0 1 mA CES CB BE I Collector Cut-off Current V =800V, I =0 10 μA CBO CB E I Emitter Cut-off Current V =4V, I =0 40 200 mA EBO EB C BV Base-Emitter Breakdown Voltage I =300mA, I =0 6 V EBO E C h DC Current Gain V =5V, I =1A 8 FE1 CE C h V =5V, I =4A 47 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I =4A, I =1A 5 V CE C B V (sat) Base-Emitter Saturation Voltage I =4A, I =1A 1.5 V BE C B V Damper Diode Turn On Voltage I = 4.5A 2 V F F t * Storage Time V =200V, I =4A, R =50Ω 3 μs STG CC C L I =1.0A, I = - 2.0A t * Fall Time B1 B2 0.2 μs F * Pulse Test: PW=20μs, duty Cycle=1% Pulsed Thermal Characteristics T =25°C unless otherwise noted C Symbol Parameter Typ Max Units R Thermal Resistance, Junction to Case 2.5 °C/W θjC ©2002 Rev. A, July 2002
