FGA25N120ANTDTU ,1200V, 25A, NPT Trench IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condi ..
FGA50N100BNTD ,1000V, NPT Trench IGBTapplications.ApplicationUPS, Welder, Induction Heating, Microwave OvenC CG GTO-3PG C EE EAbsolute ..
FGAF40N60UF ,Ultrafast IGBTApplicationsAC & DC motor controls, general purpose inverters, robotics, and servo controls. C CG G ..
FGAF40N60UFD ,Ultrafast IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condit ..
FGB20N60SFD ,600V, 20A, Field Stop IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condi ..
FGB20N6S2D ,600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth TM Diodeapplications where low Low Gate Charge . . . . . . . . . 30nC at V = 15VGEconduction loss, fast s ..
FSAL200QSC ,Wide Bandwidth Quad 2:1 Analog Multiplexer/Demultiplexer SwitchFeaturesThe Fairchild Switch FSAL200 is a rail-to-rail quad 2:1
FGA25N120ANTDTU
1200V, 25A, NPT Trench IGBT
FGA25N120ANTD/FGA25N120ANTD_F109 1200 V, 25 A NPT Trench IGBT April 2013 FGA25N120ANTD/FGA25N120ANTD_F109 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Coefficient Description • Low Saturation Voltage: V = 2.0 V CE(sat), typ ® Using Fairchild 's proprietary trench design and advanced NPT @ I = 25 A and T = 25C C C technology, the 1200V NPT IGBT offers superior conduction • Low Switching Loss: E = 0.96 mJ off, typ and switching performances, high avalanche ruggedness and @ I = 25 A and T = 25C C C easy parallel operation. This device is well suited for the reso- nant or soft switching application such as induction heating, • Extremely Enhanced Avalanche Capability microwave oven. Applications • Induction Heating, Microwave Oven C C G G TO-3P E E G C E Absolute Maximum Ratings Symbol Description FGA25N120ANTD Unit V Collector-Emitter Voltage 1200 V CES V Gate-Emitter Voltage 20 V GES I Collector Current @ T = 25C 50 A C C Collector Current @ T = 100C 25 A C I Pulsed Collector Current 90 A CM (1) I Diode Continuous Forward Current @ T = 100C 25 A F C I Diode Maximum Forward Current 150 A FM P Maximum Power Dissipation @ T = 25C 312 W D C Maximum Power Dissipation @ T = 100C 125 W C T Operating Junction Temperature -55 to +150 C J T Storage Temperature Range -55 to +150 C stg T Maximum Lead Temp. for soldering 300 C L Purposes, 1/8” from case for 5 seconds Notes: (1) Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Unit R (IGBT) Thermal Resistance, Junction-to-Case -- 0.4 C/W JC R (DIODE) Thermal Resistance, Junction-to-Case -- 2.0 C/W JC R Thermal Resistance, Junction-to-Ambient -- 40 C/W JA ©2006 1 FGA25N120ANTD/FGA25N120ANTD_F109 Rev. C0
