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FGA20S120MFSCN/a5000avai1200V, 20A, Shorted-anode IGBT


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FGA20S120M
1200V, 20A, Shorted-anode IGBT
March 2013
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Thermal Characteristics
Notes:
1: Limited by Tjmax
Symbol Description Ratings Unit
VCES Collector to Emitter Voltage 1200 V
VGES Gate to Emitter Voltage ±25 V Collector Current @ TC = 25oC 40 A
Collector Current @ TC = 100oC 20 A
ICM (1) Pulsed Collector Current 60 A Diode Continuous Forward Current @ TC = 25oC 40 A Diode Continuous Forward Current @ TC = 100oC 20 A Maximum Power Dissipation @ TC = 25oC 348 W
Maximum Power Dissipation @ TC = 100oC 174 W
TJ Operating Junction Temperature -55 to +175 oC
Tstg Storage Temperature Range -55 to +175 oC Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds 300 oC
Symbol Parameter Typ. Max. Unit
RθJC(IGBT) Thermal Resistance, Junction to Case -- 0.43 o C/W
RθJC(Diode) Thermal Resistance, Junction to Case -- 0.43 o C/W
RθJA Thermal Resistance, Junction to Ambient -- 40 o C/WCE TO-3PN
FGA20S120M
1200 V , 20 A Shorted-anode IGBT
Features High Speed Switching Low Saturation Voltage: VCE(sat) = 1.55 V @ IC = 20 A High Input Impedance RoHS Compliant
Applications Induction Heating, Microwave Oven
General Description
Using advanced field stop trench and shorted-anode technol-
ogy, Fairchild® ’s shorted-anode trench IGBTs offer superior con-
duction and switching performances for soft switching
applications. The device can operate in parallel configuration
with exceptional avalanche capability. This device is designed
for induction heating and microwave oven.
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