FFAF40U60DNTU ,40A/600V Ultra Fast Recovery RectifierApplications General purposeTO-3PF Switching mode power supply1 2 3 Free-wheeling diode ..
FFAF60U60DNTU ,60A/600V Ultra Fast Recovery RectifierApplications General purposeTO-3PF Switching mode power supply1 2 3 Free-wheeling diode ..
FFAF60UA60DN ,60A, 600V, Ultrafast Dual DiodeApplications• Boost Diode in PFC and Switching Mode Power Supply• Welding, UPS and Motor Control Ap ..
FFB05U120STM ,5.0A/1200V Ultra Fast Recovery Rectifier
FFB06U40STM ,6A/400V Ultra Fast Recovery Rectifiers
FFB10U20STM ,10A/200V Ultra Fast Recovery Rectifiers
FS8S0765RCB ,7A/650V Snychronized Power Switch, Primary Side Regulationfeatures• Low Operating Current (Max:15mA) integrated oscillator to be synchronized with the extern ..
FS8S0765RCBYDTU ,7A/650V Snychronized Power Switch, Primary Side RegulationFeatures Description• Burst Mode Operation to Reduce the Power Consumption FS8S0765RCB is a Fairchi ..
FS8S0965RCBYDTU ,9A/650V Snychronized Power Switch, Primary Side Regulationfeatures• Low Operating Current (Max:15mA) integrated oscillator to be synchronized with the extern ..
FSA1156L6X ,Low RON Low Voltage SPST Analog SwitchFeaturesThe FSA1156 and FSA1157 are high performance Single
FFAF40U60DNTU
40A/600V Ultra Fast Recovery Rectifier
FFAF40U60DN FFAF40U60DN Features • High voltage and high reliability High speed switching Low forward voltage Applications General purpose TO-3PF Switching mode power supply 1 2 3 Free-wheeling diode for motor application Power switching circuits ULTRA FAST RECOVERY POWER RECTIFIER Absolute Maximum Ratings (per diode) T =25° °C unless otherwise noted ° ° C Symbol Parameter Value Units V Peak Repetitive Reverse Voltage 600 V RRM I Average Rectified Forward Current @ T = 100°C40 A F(AV) C I Non-repetitive Peak Surge Current 240 A FSM 60Hz Single Half-Sine Wave T T Operating Junction and Storage Temperature - 65 to +150 °C J, STG Thermal Characteristics Symbol Parameter Value Units R Maximum Thermal Resistance, Junction to Case 0.7 °C/W θJC Electrical Characteristics (per diode) T =25 ° °C unless otherwise noted ° ° C Symbol Parameter Min. Typ. Max. Units V Maximum Instantaneous Forward Voltage V FM * I = 40A T = 25 °C - - 2.1 F C I = 40A T = 100 °C - - 1.9 F C I Maximum Instantaneous Reverse Current μA RM * @ rated V T = 25 °C - - 20 R C T = 100 °C - - 200 C t Maximum Reverse Recovery Time - - 110 ns rr I Maximum Reverse Recovery Current - - 10 A rr Q Maximum Reverse Recovery Charge - - 550 nC rr (I =40A, di/dt = 200A/μs) F W Avalanche Energy 1.0 - - mJ AVL * Pulse Test: Pulse Width=300μs, Duty Cycle=2% ©2000 Fairchild Semiconductor International Rev. F, September 2000
