| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| FE1.1S |
汤铭 |
N/a |
34 |
 |
|
| FE1.1S |
TANGMING |
N/a |
24 |
|
|
| FE1.1S |
Termin |
N/a |
135 |
|
|
FE1B ,Ultra Fast Sinterglass Diode Document Number 860682 Rev. 2, 28-Jan-03Average Forward Rectified Current (A)Peak Forward Surge Cu ..
FE1D ,GLASS PASSIVATED FAST EFFICIENT RECTIFIERFeatures • High temperature metallurgically bonded con-struction Cavity-free glass passivated jun ..
FE2B ,Ultra Fast Sinterglass Diode Document Number 860694 Rev. 2, 28-Jan-03FE2A to FE2DVISHAYVishay SemiconductorsOzone Depleting Sub ..
FE2C ,Ultra Fast Sinterglass DiodeElectrical CharacteristicsT = 25 °C, unless otherwise specified ambParameter Test condition Symbol ..
FE2D ,Ultra Fast Sinterglass DiodeFeatures • High temperature metallurgically bonded con-struction Cavity-free glass passivated jun ..
FS4KM-12 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS50R06W1E3 , EasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC
FS50R12KT3 , EconoPACK2 with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
