IC Phoenix
 
Home ›  FF11 > FDZ294N,N-Channel 2.5V Specified PowerTrench® BGA MOSFET
FDZ294N Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
FDZ294NFAIRCHILN/a2780avaiN-Channel 2.5V Specified PowerTrench® BGA MOSFET


FDZ294N ,N-Channel 2.5V Specified PowerTrench® BGA MOSFETApplications • Outstanding thermal transfer characteristics: • Battery management 4 times better t ..
FDZ298N ,20V N-Channel 2.5V Specified PowerTrench BGA MOSFETFeatures Combining Fairchild’s advanced 2.5V specified · 6 A, 20 V R = 27 mW @ V = 4.5 V DS(ON) GS ..
FDZ298N ,20V N-Channel 2.5V Specified PowerTrench BGA MOSFETApplications · Outstanding thermal transfer characteristics: · Battery management 4 times better t ..
FDZ299P ,20V P-Channel 2.5 V Specified PowerTrench BGA MOSFETFeatures Combining Fairchild’s advanced 2.5V specified · –4.6 A, –20 V R = 55 mW @ V = –4.5 V DS(O ..
FDZ372NZ , N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET
FDZ5047N ,30V N-Channel Logic Level PowerTrench BGA MOSFETFeatures Combining Fairchild’s 30V PowerTrench process with • 22 A, 30 V. R = 2.9 mΩ @ V = 10 V DS( ..
FS401LF , PC to TV Video Scan Converters
FS40SM-5 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS40SM-5 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS40SM-6 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS450 , i-Net TV Interface Video Processor
FS450R12KE3 , EconoPACK with trench/fieldstop IGBT3 and EmCon High Efficiency diode


FDZ294N
N-Channel 2.5V Specified PowerTrench® BGA MOSFET
FDZ294N July 2005 FDZ294N ® N-Channel 2.5 V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified • 6 A, 20 V R = 23 mΩ @ V = 4.5 V DS(ON) GS PowerTrench process with state of the art BGA R = 34 mΩ @ V = 2.5 V DS(ON) GS packaging, the FDZ294N minimizes both PCB space . This BGA MOSFET embodies a and R DS(ON) 2 • Occupies only 2.25 mm of PCB area. breakthrough in packaging technology which enables the device to combine excellent thermal transfer Less than 50% of the area of a SSOT-6 characteristics, high current handling capability, ultra- low profile packaging, low gate charge, and low R . DS(ON) • Ultra-thin package: less than 0.85mm height when mounted to PCB Applications • Outstanding thermal transfer characteristics: • Battery management 4 times better than SSOT-6 • Battery protection • Ultra-low Q x R figure-of-merit g DS(ON) • High power and current handling capability. D GATE G S Index slot Top Bottom o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DSS V Gate-Source Voltage V GSS ±12 I Drain Current – Continuous (Note 1a) 6 A D – Pulsed 10 Power Dissipation for Single Operation (Note 1a) 1.7 W P D T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics °C/W R Thermal Resistance, Junction-to-Ambient (Note 1a) 72 θJA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity E FDZ294N 7” 8mm 3000 units FDZ294N Rev. B3 (W) ©2005
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED