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FDZ291PFAIRCHILDN/a60000avaiP-Channel 1.5 V Specified PowerTrench BGA MOSFET


FDZ291P ,P-Channel 1.5 V Specified PowerTrench BGA MOSFETApplications • Outstanding thermal transfer characteristics: 4 times better than SSOT-6 • Battery m ..
FDZ293P ,-20V P-Channel 2.5 V Specified PowerTrench BGA MOSFETGeneral Descriptionto PCBCombining Fairchild’s advanced 2.5V specified PowerTrench Outstanding ther ..
FDZ294N ,N-Channel 2.5V Specified PowerTrench® BGA MOSFETApplications • Outstanding thermal transfer characteristics: • Battery management 4 times better t ..
FDZ298N ,20V N-Channel 2.5V Specified PowerTrench BGA MOSFETFeatures Combining Fairchild’s advanced 2.5V specified · 6 A, 20 V R = 27 mW @ V = 4.5 V DS(ON) GS ..
FDZ298N ,20V N-Channel 2.5V Specified PowerTrench BGA MOSFETApplications · Outstanding thermal transfer characteristics: · Battery management 4 times better t ..
FDZ299P ,20V P-Channel 2.5 V Specified PowerTrench BGA MOSFETFeatures Combining Fairchild’s advanced 2.5V specified · –4.6 A, –20 V R = 55 mW @ V = –4.5 V DS(O ..
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FDZ291P
P-Channel 1.5 V Specified PowerTrench BGA MOSFET
FDZ291P October 2005 FDZ291P ® P-Channel 1.5 V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 1.5V specified • –4.6 A, –20 V R = 40 mΩ @ V = –4.5 V DS(ON) GS PowerTrench process with state of the art BGA R = 60 mΩ @ V = –2.5 V DS(ON) GS packaging, the FDZ291P minimizes both PCB space R = 160 mΩ @ V = –1.5 V DS(ON) GS . This BGA MOSFET embodies a and R DS(ON) 2 • Occupies only 2.25 mm of PCB area. breakthrough in packaging technology which enables the device to combine excellent thermal transfer Less than 50% of the area of a SSOT-6 characteristics, high current handling capability, ultra- • Ultra-thin package: less than 0.85 mm height when low profile packaging, low gate charge, and low R . DS(ON) mounted to PCB Applications • Outstanding thermal transfer characteristics: 4 times better than SSOT-6 • Battery management • Ultra-low Q x R figure-of-merit g DS(ON) • Load switch • High power and current handling capability. • Battery protection S GATE G D Bottom Top o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DSS V Gate-Source Voltage V GSS ±8 I A D Drain Current – Continuous (Note 1a) –4.6 – Pulsed –10 Power Dissipation for Single Operation (Note 1a) 1.7 W P D T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics °C/W R Thermal Resistance, Junction-to-Ambient (Note 1a) 72 θJA Thermal Resistance, Junction-to-Case (Note 1a) 2 R θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity D FDZ291P 7” 8mm 3000 units ©2005 FDZ291P Rev. C1 (W)
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