fdz197pz ,-20V P-Channel 1.5V Specified PowerTrench?Thin WL-CSP MOSFETApplications Ultra-thin package: less than 0.65 mm height when mounted to PCB Battery management ..
FDZ202P ,P-Channel 2.5V Specified PowerTrench BGA MOSFETApplications • Outstanding thermal transfer characteristics: 4 times better than SSOT-6 • Battery m ..
FDZ203N ,N-Channel 2.5V Specified PowerTrench ?BGA MOSFETApplications• Ultra-low Q x R figure-of-merit.g DS(ON)• Battery management• High power and current ..
FDZ204P ,P-Channel 2.5V Specified PowerTrench BGA MOSFETFeatures Combining Fairchild’s advanced 2.5V specified • –4.5 A, –20 V. R = 45 mΩ @ V = –4.5 V DS(O ..
FDZ206P ,P-Channel 2.5V Specified PowerTrench BGA MOSFETFeatures Combining Fairchild’s advanced 2.5V specified • –13 A, –20 V. R = 9.5 mΩ @ V = –4.5 V DS(O ..
FDZ208P ,P-Channel 30 Volt PowerTrench BGA MOSFETApplications • 3.5 x 4 mm footprint • Battery management • High power and current handling capabil ..
FS3KM-9 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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FS3UM-18A , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS401LF , PC to TV Video Scan Converters
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fdz197pz
-20V P-Channel 1.5V Specified PowerTrench?Thin WL-CSP MOSFET
® FDZ197PZ P-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET June 2009 FDZ197PZ ® P-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET -20 V, -3.8 A, 64 mΩ Features General Description ® Max r = 64 mΩ at V = -4.5 V, I = -2.0 A Designed on Fairchild's advanced 1.5 V PowerTrench process DS(on) GS D with state of the art "fine pitch" WLCSP packaging process, the Max r = 71 mΩ at V = -2.5 V, I = -2.0 A DS(on) GS D FDZ197PZ minimizes both PCB space and r . This DS(on) Max r = 79 mΩ at V = -1.8 V, I = -1.0 A advanced WLCSP MOSFET embodies a breakthrough in DS(on) GS D packaging technology which enables the device to combine Max r = 95 mΩ at V = -1.5 V, I = -1.0 A DS(on) GS D excellent thermal transfer characteristics, ultra-low profile 2 Occupies only 1.5 mm of PCB area.Less than 50% of the packaging, low gate charge, and low r . DS(on) area of 2 x 2 BGA Applications Ultra-thin package: less than 0.65 mm height when mounted to PCB Battery management Load switch HBM ESD protection level > 4400V (Note3) Battery protection RoHS Compliant PIN1 S S G D S D TOP BOTTOM WL-CSP 1x1.5 Thin MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage -20 V DS V Gate to Source Voltage ±8 V GS -Continuous T = 25°C (Note 1a) -3.8 A I A D -Pulsed -15 Power Dissipation T = 25°C (Note 1a) 1.9 A P W D Power Dissipation T = 25°C (Note 1b) 0.9 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 65 θJA °C/W R Thermal Resistance, Junction to Ambient (Note 1b) 133 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 7 FDZ197PZ WL-CSP 1x1.5 Thin 7 ” 8 mm 5000 units 1 ©2009 FDZ197PZ Rev.C1
